Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon

Jiancheng Xie; Feng Shi; Shanshan Wang; Xing Peng; Qun Hao

doi:10.3390/nano14231866

Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon

Jiancheng Xie, Feng Shi^*, Shanshan Wang, Xing Peng, Qun Hao

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh⁻¹. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.

Original language	English
Article number	1866
Journal	Nanomaterials
Volume	14
Issue number	23
DOIs	https://doi.org/10.3390/nano14231866
Publication status	Published - Dec 2024

Keywords

green chemical shear-thickening polishing
low damage
material removal
monocrystalline silicon

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title = "Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon",

abstract = "A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh−1. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.",

keywords = "green chemical shear-thickening polishing, low damage, material removal, monocrystalline silicon",

author = "Jiancheng Xie and Feng Shi and Shanshan Wang and Xing Peng and Qun Hao",

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doi = "10.3390/nano14231866",

language = "English",

volume = "14",

journal = "Nanomaterials",

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T1 - Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon

AU - Xie, Jiancheng

AU - Shi, Feng

AU - Wang, Shanshan

AU - Peng, Xing

AU - Hao, Qun

PY - 2024/12

Y1 - 2024/12

N2 - A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh−1. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.

AB - A green chemical shear-thickening polishing (GC-STP) method was studied to improve the surface precision and processing efficiency of monocrystalline silicon. A novel green shear-thickening polishing slurry composed of silica nanoparticles, alumina abrasive, sorbitol, plant ash, polyethylene glycol, and deionized water was formulated. The monocrystalline silicon was roughly ground using a diamond polishing slurry and then the GC-STP process. The material removal rate (MRR) during GC-STP was 4.568 μmh−1. The material removal mechanism during the processing of monocrystalline silicon via GC-STP was studied using elemental energy spectroscopy and FTIR spectroscopy. After 4 h of the GC-STP process, the surface roughness (Ra) of the monocrystalline silicon wafer was reduced to 0.278 nm, and an excellent monocrystalline silicon surface quality was obtained. This study shows that GC-STP is a green, efficient, and low-damage polishing method for monocrystalline silicon.

KW - green chemical shear-thickening polishing

KW - low damage

KW - material removal

KW - monocrystalline silicon

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VL - 14

JO - Nanomaterials

JF - Nanomaterials

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M1 - 1866

ER -

Green Chemical Shear-Thickening Polishing of Monocrystalline Silicon

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Keywords

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