Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

Yande Que; Yong Zhang; Yeliang Wang; Li Huang; Wenyan Xu; Jing Tao; Lijun Wu; Yimei Zhu; Kisslinger Kim; Michael Weinl; Matthias Schreck; Chengmin Shen; Shixuan Du; Yunqi Liu; H. J. Gao

doi:10.1002/admi.201400543

Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

Yande Que
, Yong Zhang
, Yeliang Wang
, Li Huang
, Wenyan Xu
, Jing Tao
, Lijun Wu
, Yimei Zhu
, Kisslinger Kim
, Michael Weinl
, Matthias Schreck
, Chengmin Shen
, Shixuan Du
, Yunqi Liu
, H. J. Gao^*

^*Corresponding author for this work

CAS - Institute of Physics
Brookhaven National Laboratory
Augsburg University
CAS - Institute of Chemistry

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.

Original language	English
Article number	1400543
Journal	Advanced Materials Interfaces
Volume	2
Issue number	3
DOIs	https://doi.org/10.1002/admi.201400543
Publication status	Published - 1 Feb 2015
Externally published	Yes

Keywords

Ir(111)
graphene-silicon
intercalation
layered structures
single-crystalline thin films

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10.1002/admi.201400543

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title = "Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films",

abstract = "Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.",

keywords = "Ir(111), graphene-silicon, intercalation, layered structures, single-crystalline thin films",

author = "Yande Que and Yong Zhang and Yeliang Wang and Li Huang and Wenyan Xu and Jing Tao and Lijun Wu and Yimei Zhu and Kisslinger Kim and Michael Weinl and Matthias Schreck and Chengmin Shen and Shixuan Du and Yunqi Liu and Gao, \{H. J.\}",

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year = "2015",

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doi = "10.1002/admi.201400543",

language = "English",

volume = "2",

journal = "Advanced Materials Interfaces",

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TY - JOUR

T1 - Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

AU - Que, Yande

AU - Zhang, Yong

AU - Wang, Yeliang

AU - Huang, Li

AU - Xu, Wenyan

AU - Tao, Jing

AU - Wu, Lijun

AU - Zhu, Yimei

AU - Kim, Kisslinger

AU - Weinl, Michael

AU - Schreck, Matthias

AU - Shen, Chengmin

AU - Du, Shixuan

AU - Liu, Yunqi

AU - Gao, H. J.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.

AB - Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-based materials. Graphene-silicon layered structures are successfully constructed on Ir(111) thin films on Si substrates with an yttria-stabilized zirconia buffer layer via intercalation approach. Such heterolayered structures are compatible with the current Si-based microelectronic technique, showing high promise for applications in future micro- and nanoelectronic devices.

KW - Ir(111)

KW - graphene-silicon

KW - intercalation

KW - layered structures

KW - single-crystalline thin films

UR - https://www.scopus.com/pages/publications/84938632819

U2 - 10.1002/admi.201400543

DO - 10.1002/admi.201400543

M3 - Article

AN - SCOPUS:84938632819

SN - 2196-7350

VL - 2

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 3

M1 - 1400543

ER -

Graphene-Silicon Layered Structures on Single-Crystalline Ir(111) Thin Films

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Keywords

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