Graphene on SiC as a Q-switcher for a 2 μm laser

Qing Wang; Hao Teng; Yuwan Zou; Zhiguo Zhang; Dehua Li; Ran Wang; Chunqing Gao; Jingjing Lin; Liwei Guo; Zhiyi Wei

doi:10.1364/OL.37.000395

Graphene on SiC as a Q-switcher for a 2 μm laser

Qing Wang, Hao Teng, Yuwan Zou, Zhiguo Zhang, Dehua Li, Ran Wang, Chunqing Gao, Jingjing Lin, Liwei Guo, Zhiyi Wei^*

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Qswitched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.

Original language	English
Pages (from-to)	395-397
Number of pages	3
Journal	Optics Letters
Volume	37
Issue number	3
DOIs	https://doi.org/10.1364/OL.37.000395
Publication status	Published - 1 Feb 2012

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title = "Graphene on SiC as a Q-switcher for a 2 μm laser",

abstract = "Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Qswitched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.",

author = "Qing Wang and Hao Teng and Yuwan Zou and Zhiguo Zhang and Dehua Li and Ran Wang and Chunqing Gao and Jingjing Lin and Liwei Guo and Zhiyi Wei",

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T1 - Graphene on SiC as a Q-switcher for a 2 μm laser

AU - Wang, Qing

AU - Teng, Hao

AU - Zou, Yuwan

AU - Zhang, Zhiguo

AU - Li, Dehua

AU - Wang, Ran

AU - Gao, Chunqing

AU - Lin, Jingjing

AU - Guo, Liwei

AU - Wei, Zhiyi

PY - 2012/2/1

Y1 - 2012/2/1

N2 - Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Qswitched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.

AB - Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Qswitched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.

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U2 - 10.1364/OL.37.000395

DO - 10.1364/OL.37.000395

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VL - 37

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EP - 397

JO - Optics Letters

JF - Optics Letters

IS - 3

ER -

Graphene on SiC as a Q-switcher for a 2 μm laser

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