Graphene nanoribbons epitaxy on boron nitride

Xiaobo Lu; Wei Yang; Shuopei Wang; Shuang Wu; Peng Chen; Jing Zhang; Jing Zhao; Jianling Meng; Guibai Xie; Duoming Wang; Guole Wang; Ting Ting Zhang; Kenji Watanabe; Takashi Taniguchi; Rong Yang; Dongxia Shi; Guangyu Zhang

doi:10.1063/1.4943940

Graphene nanoribbons epitaxy on boron nitride

Xiaobo Lu
, Wei Yang
, Shuopei Wang
, Shuang Wu
, Peng Chen
, Jing Zhang
, Jing Zhao
, Jianling Meng
, Guibai Xie
, Duoming Wang
, Guole Wang
, Ting Ting Zhang
, Kenji Watanabe
, Takashi Taniguchi
, Rong Yang
, Dongxia Shi
, Guangyu Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm² V^-1 s^-1 for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

Original language	English
Article number	113103
Journal	Applied Physics Letters
Volume	108
Issue number	11
DOIs	https://doi.org/10.1063/1.4943940
Publication status	Published - 14 Mar 2016
Externally published	Yes

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title = "Graphene nanoribbons epitaxy on boron nitride",

abstract = "In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm2 V-1 s-1 for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moir{\'e} pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.",

author = "Xiaobo Lu and Wei Yang and Shuopei Wang and Shuang Wu and Peng Chen and Jing Zhang and Jing Zhao and Jianling Meng and Guibai Xie and Duoming Wang and Guole Wang and Zhang, \{Ting Ting\} and Kenji Watanabe and Takashi Taniguchi and Rong Yang and Dongxia Shi and Guangyu Zhang",

note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

year = "2016",

month = mar,

day = "14",

doi = "10.1063/1.4943940",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

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TY - JOUR

T1 - Graphene nanoribbons epitaxy on boron nitride

AU - Lu, Xiaobo

AU - Yang, Wei

AU - Wang, Shuopei

AU - Wu, Shuang

AU - Chen, Peng

AU - Zhang, Jing

AU - Zhao, Jing

AU - Meng, Jianling

AU - Xie, Guibai

AU - Wang, Duoming

AU - Wang, Guole

AU - Zhang, Ting Ting

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Yang, Rong

AU - Shi, Dongxia

AU - Zhang, Guangyu

PY - 2016/3/14

Y1 - 2016/3/14

N2 - In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm2 V-1 s-1 for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

AB - In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm2 V-1 s-1 for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

UR - https://www.scopus.com/pages/publications/84962551326

U2 - 10.1063/1.4943940

DO - 10.1063/1.4943940

M3 - Article

AN - SCOPUS:84962551326

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113103

ER -

Graphene nanoribbons epitaxy on boron nitride

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