Giant enhancement of light emission from nanoscale Bi2Se3

Anthony Vargas; Fangze Liu; Swastik Kar

doi:10.1063/1.4922729

Giant enhancement of light emission from nanoscale Bi₂Se₃

Anthony Vargas
, Fangze Liu
, Swastik Kar

Department of Physics
Northeastern University
George J. Kostas Research Institute for Homeland Security

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Bi₂Se₃ is a well-known room temperature topological insulator with a gapless surface state and ∼300-meV bulk band-gap, and as such has never been proposed to possess light-emitting properties. Here, we report prominent light emission in the visible region via photoluminescence (PL) measurements of chemical vapor deposition grown Bi₂Se₃ nanoplates with an average thickness and effective diameter of tens of nanometers. When excited using 488-nm (2.54-eV) laser light, these nanoscale Bi₂Se₃ platelets show a strong photoluminescence response in the E_ph-∼-2.1-2.3-eV region, with significant enhancement of light emission compared to bulk level emission. After annealing samples at 200-°C for 4 h, PL intensity increased by a factor of 2.4 to 3 for nanoscale Bi₂Se₃.

Original language	English
Article number	243107
Journal	Applied Physics Letters
Volume	106
Issue number	24
DOIs	https://doi.org/10.1063/1.4922729
Publication status	Published - 15 Jun 2015
Externally published	Yes

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abstract = "Bi2Se3 is a well-known room temperature topological insulator with a gapless surface state and ∼300-meV bulk band-gap, and as such has never been proposed to possess light-emitting properties. Here, we report prominent light emission in the visible region via photoluminescence (PL) measurements of chemical vapor deposition grown Bi2Se3 nanoplates with an average thickness and effective diameter of tens of nanometers. When excited using 488-nm (2.54-eV) laser light, these nanoscale Bi2Se3 platelets show a strong photoluminescence response in the Eph-∼-2.1-2.3-eV region, with significant enhancement of light emission compared to bulk level emission. After annealing samples at 200-°C for 4 h, PL intensity increased by a factor of 2.4 to 3 for nanoscale Bi2Se3.",

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AU - Liu, Fangze

AU - Kar, Swastik

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N2 - Bi2Se3 is a well-known room temperature topological insulator with a gapless surface state and ∼300-meV bulk band-gap, and as such has never been proposed to possess light-emitting properties. Here, we report prominent light emission in the visible region via photoluminescence (PL) measurements of chemical vapor deposition grown Bi2Se3 nanoplates with an average thickness and effective diameter of tens of nanometers. When excited using 488-nm (2.54-eV) laser light, these nanoscale Bi2Se3 platelets show a strong photoluminescence response in the Eph-∼-2.1-2.3-eV region, with significant enhancement of light emission compared to bulk level emission. After annealing samples at 200-°C for 4 h, PL intensity increased by a factor of 2.4 to 3 for nanoscale Bi2Se3.

AB - Bi2Se3 is a well-known room temperature topological insulator with a gapless surface state and ∼300-meV bulk band-gap, and as such has never been proposed to possess light-emitting properties. Here, we report prominent light emission in the visible region via photoluminescence (PL) measurements of chemical vapor deposition grown Bi2Se3 nanoplates with an average thickness and effective diameter of tens of nanometers. When excited using 488-nm (2.54-eV) laser light, these nanoscale Bi2Se3 platelets show a strong photoluminescence response in the Eph-∼-2.1-2.3-eV region, with significant enhancement of light emission compared to bulk level emission. After annealing samples at 200-°C for 4 h, PL intensity increased by a factor of 2.4 to 3 for nanoscale Bi2Se3.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Giant enhancement of light emission from nanoscale Bi₂Se₃

Abstract

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