Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires

X. Zhang; B. Zhong; L. Liu; X. Huang; G. Wen; Y. Huang; J. Bollmann

doi:10.1088/1757-899X/123/1/012051

Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires

X. Zhang^*
, B. Zhong
, L. Liu
, X. Huang
, G. Wen
, Y. Huang
, J. Bollmann

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

Silicon carbide nanowires were fabricated by gas pressure annealing of SiOC nanocomposite powders, which were synthesized by pyrolysis of a SiO₂ - sucrose gel. The reaction was carried out in an atmosphere sintering furnace without any additives. The nanowires have pronounced homogenous diameters smaller than 100 nm and lengths of up to several millimetres. The X-ray diffraction pattern indicates the formation of the β-SiC phase and transmission electron microscopy analysis show the monocrystalline structure of the nanowires.

Original language	English
Article number	012051
Journal	IOP Conference Series: Materials Science and Engineering
Volume	123
Issue number	1
DOIs	https://doi.org/10.1088/1757-899X/123/1/012051
Publication status	Published - 15 Apr 2016
Externally published	Yes
Event	3rd International Conference on Competitive Materials and Technology Processes, IC-CMTP 2014 - Miskolc-Lillafured, Hungary Duration: 6 Oct 2014 → 10 Oct 2014

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title = "Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires",

abstract = "Silicon carbide nanowires were fabricated by gas pressure annealing of SiOC nanocomposite powders, which were synthesized by pyrolysis of a SiO2 - sucrose gel. The reaction was carried out in an atmosphere sintering furnace without any additives. The nanowires have pronounced homogenous diameters smaller than 100 nm and lengths of up to several millimetres. The X-ray diffraction pattern indicates the formation of the β-SiC phase and transmission electron microscopy analysis show the monocrystalline structure of the nanowires.",

author = "X. Zhang and B. Zhong and L. Liu and X. Huang and G. Wen and Y. Huang and J. Bollmann",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 3rd International Conference on Competitive Materials and Technology Processes, IC-CMTP 2014 ; Conference date: 06-10-2014 Through 10-10-2014",

year = "2016",

month = apr,

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doi = "10.1088/1757-899X/123/1/012051",

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TY - JOUR

T1 - Gas pressure atmosphere annealing

T2 - 3rd International Conference on Competitive Materials and Technology Processes, IC-CMTP 2014

AU - Zhang, X.

AU - Zhong, B.

AU - Liu, L.

AU - Huang, X.

AU - Wen, G.

AU - Huang, Y.

AU - Bollmann, J.

PY - 2016/4/15

Y1 - 2016/4/15

N2 - Silicon carbide nanowires were fabricated by gas pressure annealing of SiOC nanocomposite powders, which were synthesized by pyrolysis of a SiO2 - sucrose gel. The reaction was carried out in an atmosphere sintering furnace without any additives. The nanowires have pronounced homogenous diameters smaller than 100 nm and lengths of up to several millimetres. The X-ray diffraction pattern indicates the formation of the β-SiC phase and transmission electron microscopy analysis show the monocrystalline structure of the nanowires.

AB - Silicon carbide nanowires were fabricated by gas pressure annealing of SiOC nanocomposite powders, which were synthesized by pyrolysis of a SiO2 - sucrose gel. The reaction was carried out in an atmosphere sintering furnace without any additives. The nanowires have pronounced homogenous diameters smaller than 100 nm and lengths of up to several millimetres. The X-ray diffraction pattern indicates the formation of the β-SiC phase and transmission electron microscopy analysis show the monocrystalline structure of the nanowires.

UR - https://www.scopus.com/pages/publications/84977494356

U2 - 10.1088/1757-899X/123/1/012051

DO - 10.1088/1757-899X/123/1/012051

M3 - Conference article

AN - SCOPUS:84977494356

SN - 1757-8981

VL - 123

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

IS - 1

M1 - 012051

Y2 - 6 October 2014 through 10 October 2014

ER -

Gas pressure atmosphere annealing: A novel method for the preparation of SiC nanowires

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