GaAs HBT power amplifier used for mobile communication

Feng Qian; Xinyu Chen; Jianming Zhou; Xiaojian Chen

GaAs HBT power amplifier used for mobile communication

Feng Qian^*, Xinyu Chen, Jianming Zhou, Xiaojian Chen

^*Corresponding author for this work

Nanjing Electronic Devices Institute

Research output: Contribution to journal › Article › peer-review

Abstract

This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.

Original language	English
Pages (from-to)	375-379+386
Journal	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
Volume	21
Issue number	4
Publication status	Published - Nov 2001
Externally published	Yes

Keywords

GaAs HBT
Mobile communication
Power amplifier

Cite this

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title = "GaAs HBT power amplifier used for mobile communication",

abstract = "This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.",

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AU - Qian, Feng

AU - Chen, Xinyu

AU - Zhou, Jianming

AU - Chen, Xiaojian

PY - 2001/11

Y1 - 2001/11

N2 - This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.

AB - This paper describes the design, fabrication and test results of a developed GaAs HBT power amplifier used in a mobile communication system. The circuit topology is presented. This two-stage amplifier has the associated gain of more than 30 dB and 1 dB compression output power of more than 30 dBm and the saturated output power of more than 30 dBm with the maximum power added efficiency of more than 37% at frequency 1800 MHz @ 3.6 V bias. A satisfied yield was obtained on GaAs HBT wafer in 3 inch diameter.

KW - GaAs HBT

KW - Mobile communication

KW - Power amplifier

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AN - SCOPUS:0035502809

SN - 1000-3819

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SP - 375-379+386

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 4

ER -

GaAs HBT power amplifier used for mobile communication

Abstract

Keywords

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