Gaas-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Jie Li; Hao Guo; Jun Liu; Jun Tang; Haiqiao Ni; Yunbo Shi; Chenyang Xue; Zhichuan Niu; Wendong Zhang; Mifeng Li; Ying Yu

doi:10.1186/1556-276X-8-218

Gaas-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

Jie Li
, Hao Guo
, Jun Liu
, Jun Tang^*
, Haiqiao Ni
, Yunbo Shi
, Chenyang Xue
, Zhichuan Niu
, Wendong Zhang
, Mifeng Li
, Ying Yu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10^-9m²/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

Original language	English
Article number	218
Pages (from-to)	1-6
Number of pages	6
Journal	Nanoscale Research Letters
Volume	8
Issue number	1
DOIs	https://doi.org/10.1186/1556-276X-8-218
Publication status	Published - 2013
Externally published	Yes

Keywords

Highly sensitive
Piezoresistive coefficient
RTD epitaxy on Si
Strain gauge

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10.1186/1556-276X-8-218

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abstract = "As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.",

keywords = "Highly sensitive, Piezoresistive coefficient, RTD epitaxy on Si, Strain gauge",

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TY - JOUR

T1 - Gaas-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

AU - Li, Jie

AU - Guo, Hao

AU - Liu, Jun

AU - Tang, Jun

AU - Ni, Haiqiao

AU - Shi, Yunbo

AU - Xue, Chenyang

AU - Niu, Zhichuan

AU - Zhang, Wendong

AU - Li, Mifeng

AU - Yu, Ying

PY - 2013

Y1 - 2013

N2 - As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

AB - As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

KW - Highly sensitive

KW - Piezoresistive coefficient

KW - RTD epitaxy on Si

KW - Strain gauge

UR - https://www.scopus.com/pages/publications/84878758749

U2 - 10.1186/1556-276X-8-218

DO - 10.1186/1556-276X-8-218

M3 - Article

AN - SCOPUS:84878758749

SN - 1931-7573

VL - 8

SP - 1

EP - 6

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 218

ER -

Gaas-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

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Keywords

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