@inproceedings{c2bf3219c85d47718726259fe504ac4c,
title = "Foundamentals of Low-Resistive Indium-Violet Phosphorene Top Contact: An Ab-Initio NEGF Study",
abstract = "Two-dimensional semiconductor-metal contacts with induced mid-gap states, resulting in Fermi pinning, have been impeding the development of next-generation scaled devices. Many efforts have been devoted to find optimized evaporation methods to make ultra-clean vdW contacts. However, the fundamental mechanisms underlying the origin of induced mid-gap states and how the mid-gap states influence contact properties are still urgent to be explored. Herein, ab-initio NEGF calculations are conducted to discover the origin of mid-gap states arising in In/Au-VP vdW/bonding contacts. It is demonstrated that the bonding interactions of In-VP bonding contacts result in contact resistance as low as 0.600 kΩ·μm, which is as five orders of magnitudes as lower than case of Au-VP vdW contact. This work will pave the way for the development of next-generation devices based on 2D materials.",
keywords = "DFT, NEGF, contact resistance, violet phosphorene",
author = "Huaipeng Wang and Sicheng Liu and Shuaihong Li and Zhifang Liu and Yilin Sun and Jianlong Xu and Dan Xie",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024 ; Conference date: 22-10-2024 Through 25-10-2024",
year = "2024",
doi = "10.1109/ICSICT62049.2024.10831392",
language = "English",
series = "2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Fan Ye and Xiaona Zhu and Tang, \{Ting Ao\}",
booktitle = "2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024",
address = "United States",
}