Flexible electrolyte-gated transistor based on InZnSnO nanowires for self-adaptive applications

A pivotal characteristic of neuromorphic systems lies in their inherent capacity for self-adaptation, facilitating environmental adaptation through the attenuation of response to repetitive stimuli. Existing electrolyte-gated synaptic transistors face challenges in simulating these self-adaptive behaviors of the brain. In this work, flexible indium zinc tin oxide (IZTO) nanowires-based synaptic transistors exhibiting self-adaptive behavior were fabricated for the first time via a facile electrospinning technique. The prepared transistors can realize typical synaptic functions by continuously modulating the conductance, including excitatory/inhibitory postsynaptic current and short/long term potentiation. These properties are well maintained even under a bending radius of 12 mm. Additionally, the neuromorphic system based on IZTO nanowires-based transistors achieves a high recognition accuracy exceeding 90 % for hand-written digits recognition. The synaptic transistor exhibits obvious self-adaptive behavior and a low energy consumption with reduction of 8.2 %. Self-adaptive neuromorphic flexible transistors can not only enhance their resemblance to biological systems, but also advance the development of wearable devices and neuromorphic calculation.