Fingerprint Recognition Matrix Based on Photomultiplication-Type Organic Photodetectors with a Signal-to-Noise Ratio of 51,400

Qi Yao; Shipei Li; Yunke Qin; Xingchao Zhao; Lei Wang; Yangbing Li; Sang Young Jeong; Xiaoling Ma; Han Young Woo; Fujun Zhang; Zhinong Yu; Guangcai Yuan

doi:10.1021/acsami.4c21810

Fingerprint Recognition Matrix Based on Photomultiplication-Type Organic Photodetectors with a Signal-to-Noise Ratio of 51,400

Qi Yao, Shipei Li, Yunke Qin, Xingchao Zhao, Lei Wang, Yangbing Li, Sang Young Jeong, Xiaoling Ma, Han Young Woo, Fujun Zhang^*, Zhinong Yu^*, Guangcai Yuan^*

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 10¹² Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.

Original language	English
Pages (from-to)	15709-15717
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	17
Issue number	10
DOIs	https://doi.org/10.1021/acsami.4c21810
Publication status	Published - 12 Mar 2025

Keywords

fingerprint sensor
organic photodetectors
photomultiplication
readout circuit
silicon thin-film transistor

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10.1021/acsami.4c21810

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title = "Fingerprint Recognition Matrix Based on Photomultiplication-Type Organic Photodetectors with a Signal-to-Noise Ratio of 51,400",

abstract = "Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 1012 Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.",

keywords = "fingerprint sensor, organic photodetectors, photomultiplication, readout circuit, silicon thin-film transistor",

author = "Qi Yao and Shipei Li and Yunke Qin and Xingchao Zhao and Lei Wang and Yangbing Li and Jeong, {Sang Young} and Xiaoling Ma and Woo, {Han Young} and Fujun Zhang and Zhinong Yu and Guangcai Yuan",

note = "Publisher Copyright: {\textcopyright} 2025 American Chemical Society.",

year = "2025",

month = mar,

day = "12",

doi = "10.1021/acsami.4c21810",

language = "English",

volume = "17",

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journal = "ACS Applied Materials and Interfaces",

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T1 - Fingerprint Recognition Matrix Based on Photomultiplication-Type Organic Photodetectors with a Signal-to-Noise Ratio of 51,400

AU - Yao, Qi

AU - Li, Shipei

AU - Qin, Yunke

AU - Zhao, Xingchao

AU - Wang, Lei

AU - Li, Yangbing

AU - Jeong, Sang Young

AU - Ma, Xiaoling

AU - Woo, Han Young

AU - Zhang, Fujun

AU - Yu, Zhinong

AU - Yuan, Guangcai

PY - 2025/3/12

Y1 - 2025/3/12

N2 - Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 1012 Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.

AB - Large-area and highly sensitive image sensors are vital for undercell fingerprint recognition technology. The photomultiplication-type organic photodetector (PM-OPD) is one of the alternative choices due to its special active layers with the ratio of donor to acceptor by weight of about 100:3 for achieving single charge carrier transport channels, resulting in relatively low dark current density and high external quantum efficiency under low bias. The optimal PM-OPDs exhibit a maximal 2.1 × 1012 Jones specific detectivity at 610 nm under −6 V bias and a high signal-to-noise ratio of 51,400 at −5.2 V bias. Solution-processed PM-OPDs were prepared onto the top of a polycrystalline-silicon thin-film transistor readout circuit, and image sensors were successfully realized with 338 pixels resolution per inch. The electrical and optical properties of the fingerprint sensor were investigated, and high-quality fingerprint images were obtained.

KW - fingerprint sensor

KW - organic photodetectors

KW - photomultiplication

KW - readout circuit

KW - silicon thin-film transistor

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U2 - 10.1021/acsami.4c21810

DO - 10.1021/acsami.4c21810

M3 - Article

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SN - 1944-8244

VL - 17

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JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 10

ER -

Fingerprint Recognition Matrix Based on Photomultiplication-Type Organic Photodetectors with a Signal-to-Noise Ratio of 51,400

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Keywords

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