Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition

Wei Zhao; Ruzhi Wang; Fengying Wang; Siying Chen; Bo Wang; Hao Wang; Hui Yan

doi:10.1109/INEC.2010.5424581

Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition

Wei Zhao
, Ruzhi Wang^*
, Fengying Wang
, Siying Chen
, Bo Wang
, Hao Wang
, Hui Yan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN twolayer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	716-717
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424581
Publication status	Published - 2010
Externally published	Yes
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 3 Jan 2010 → 8 Jan 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	3/01/10 → 8/01/10

Access to Document

10.1109/INEC.2010.5424581

Cite this

Zhao, W., Wang, R., Wang, F., Chen, S., Wang, B., Wang, H., & Yan, H. (2010). Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 716-717). Article 5424581 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5424581

@inproceedings{c337defeef5246b08e50e33740ef75b9,

title = "Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition",

abstract = "GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN twolayer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.",

author = "Wei Zhao and Ruzhi Wang and Fengying Wang and Siying Chen and Bo Wang and Hao Wang and Hui Yan",

year = "2010",

doi = "10.1109/INEC.2010.5424581",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "716--717",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Zhao, W, Wang, R, Wang, F, Chen, S, Wang, B, Wang, H & Yan, H 2010, Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424581, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 716-717, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5424581

Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition. / Zhao, Wei; Wang, Ruzhi; Wang, Fengying et al.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 716-717 5424581 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition

AU - Zhao, Wei

AU - Wang, Ruzhi

AU - Wang, Fengying

AU - Chen, Siying

AU - Wang, Bo

AU - Wang, Hao

AU - Yan, Hui

PY - 2010

Y1 - 2010

N2 - GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN twolayer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.

AB - GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN twolayer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.

UR - https://www.scopus.com/pages/publications/77951653503

U2 - 10.1109/INEC.2010.5424581

DO - 10.1109/INEC.2010.5424581

M3 - Conference contribution

AN - SCOPUS:77951653503

SN - 9781424435449

T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

SP - 716

EP - 717

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this