Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Changhyun Ko; Yeonbae Lee; Yabin Chen; Joonki Suh; Deyi Fu; Aslihan Suslu; Sangwook Lee; James David Clarkson; Hwan Sung Choe; Sefaatin Tongay; Ramamoorthy Ramesh; Junqiao Wu

doi:10.1002/adma.201504779

Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

Changhyun Ko
, Yeonbae Lee
, Yabin Chen
, Joonki Suh
, Deyi Fu
, Aslihan Suslu
, Sangwook Lee
, James David Clarkson
, Hwan Sung Choe
, Sefaatin Tongay
, Ramamoorthy Ramesh
, Junqiao Wu^*

^*Corresponding author for this work

University of California at Berkeley
National University of Singapore
Arizona State University
Kyungpook National University
Lawrence Berkeley National Laboratory

Research output: Contribution to journal › Article › peer-review

173 Citations (Scopus)

Abstract

Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

Original language	English
Pages (from-to)	2923-2930
Number of pages	8
Journal	Advanced Materials
Volume	28
Issue number	15
DOIs	https://doi.org/10.1002/adma.201504779
Publication status	Published - 20 Apr 2016
Externally published	Yes

Keywords

2D materials
ferroelectrics
field-effect transistors
nonvolatile memory
transition-metal dichalcogenides

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10.1002/adma.201504779

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title = "Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory",

abstract = "Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.",

keywords = "2D materials, ferroelectrics, field-effect transistors, nonvolatile memory, transition-metal dichalcogenides",

author = "Changhyun Ko and Yeonbae Lee and Yabin Chen and Joonki Suh and Deyi Fu and Aslihan Suslu and Sangwook Lee and Clarkson, \{James David\} and Choe, \{Hwan Sung\} and Sefaatin Tongay and Ramamoorthy Ramesh and Junqiao Wu",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

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day = "20",

doi = "10.1002/adma.201504779",

language = "English",

volume = "28",

pages = "2923--2930",

journal = "Advanced Materials",

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TY - JOUR

T1 - Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

AU - Ko, Changhyun

AU - Lee, Yeonbae

AU - Chen, Yabin

AU - Suh, Joonki

AU - Fu, Deyi

AU - Suslu, Aslihan

AU - Lee, Sangwook

AU - Clarkson, James David

AU - Choe, Hwan Sung

AU - Tongay, Sefaatin

AU - Ramesh, Ramamoorthy

AU - Wu, Junqiao

PY - 2016/4/20

Y1 - 2016/4/20

N2 - Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

AB - Ferroelectrically driven nonvolatile memory is demonstrated by interfacing 2D semiconductors and ferroelectric thin films, exhibiting superior memory performance comparable to existing thin-film ferroelectric field-effect transistors. An optical memory effect is also observed with large modulation of photoluminescence tuned by the ferroelectric gating, potentially finding applications in optoelectronics and valleytronics.

KW - 2D materials

KW - ferroelectrics

KW - field-effect transistors

KW - nonvolatile memory

KW - transition-metal dichalcogenides

UR - https://www.scopus.com/pages/publications/84976240174

U2 - 10.1002/adma.201504779

DO - 10.1002/adma.201504779

M3 - Article

AN - SCOPUS:84976240174

SN - 0935-9648

VL - 28

SP - 2923

EP - 2930

JO - Advanced Materials

JF - Advanced Materials

IS - 15

ER -

Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory

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Keywords

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