Fast-heating-vapor-trapping method to aligned indium oxide bi-crystalline nanobelts arrays and their electronic properties

Aligned nanowires are likely to be more suitable for applications in electronics and optoelectronics than randomly distributed nanowires. In this paper, by using a fast-heating-vapor-trapping (FHVT) method, we successfully synthesized aligned In₂O₃ nanobelt arrays on an Au-coated silicon substrate without the use of any templates. Studies found that the nanobelts exhibited unique bi-crystalline structures consisting of two single crystalline In₂O₃ nanobelts, most of which have the same growth direction along the [100] plane. Field-effect transistors were fabricated on the basis of single In₂O₃ nanowires and they exhibited typical n-type transistor performance, which showed a decent response to UV light exposure.