Fast curvilinear optical proximity correction adopting quasi-uniform B-spline curves

He Yang, Zhen Li, Miao Yuan, Zhaoxuan Li, Yanqiu Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Curvilinear mask has better lithography imaging fidelity than rectilinear mask. However, the mask data volume has limited its practical application. Curvilinear optical proximity correction (OPC) outputs much smaller curvilinear mask file sizes than conventional inverse lithography technology (ILT). The existing Curvilinear OPC methods consume a large amount of computing resources. This paper proposes a Curvilinear OPC method adopting quasi-uniform B-spline curves to improve the optimization efficiency. The mask control points (MCP) are set by equidistant contour sampling method. Then these MCPs are connected by a closed quasi-uniform B-spline (QUBS) curve to represent the curvilinear mask. Besides, the curvilinear mask is optimized by particle swarm optimization (PSO) algorithm. Simulation results show that the proposed Curvilinear OPC method can significantly improve the optimization efficiency.

Original languageEnglish
Title of host publicationEighth International Workshop on Advanced Patterning Solutions, IWAPS 2024
EditorsYayi Wei, Tianchun Ye
PublisherSPIE
ISBN (Electronic)9781510686328
DOIs
Publication statusPublished - 2024
Externally publishedYes
Event8th International Workshop on Advanced Patterning Solutions, IWAPS 2024 - Jiaxing, China
Duration: 15 Oct 202416 Oct 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13423
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference8th International Workshop on Advanced Patterning Solutions, IWAPS 2024
Country/TerritoryChina
CityJiaxing
Period15/10/2416/10/24

Keywords

  • Curvilinear mask
  • curvilinear optical proximity correction
  • optimization efficiency
  • quasi-uniform B-spline curve

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