TY - JOUR
T1 - Facilitated interfacial electronic processes by the π−π stacked edge-on tetrabenzoporphyrin/graphene layer enables broadband ultrasensitive photodetecting with prompt response
AU - Shao, Ming Yue
AU - Yu, Miao
AU - Suzuki, Mitsuharu
AU - Yamada, Hiroko
AU - Wang, Yan Ping
AU - Chen, Yu
AU - Lu, Cheng
AU - Wang, Dong
AU - Yang, Zhi Yong
N1 - Publisher Copyright:
© 2020 American Chemical Society
PY - 2020/10/27
Y1 - 2020/10/27
N2 - Developing efficient organic photodetectors and revealing the crucial factor affecting photodetection performances are of importance in varied applications and fundamental researches. In this work, 5,15-bisdodecyl-tetrabenzoporphyrin (C12TBP)/ graphene (Gr) phototransistors were fabricated through in situ retro-Diels−Alder reaction (as-formed), which demonstrates ultrahigh responsivity and specific detectivity, fast response, and broad-band detecting abilities covering UV to near-IR radiations. The interfacial and bulk layers of C12TBP films, defined as the adlayer on Gr sheet and the other part of the films, respectively, were characterized in detail. The π−π stacked edge-on C12TBP/Gr interfacial layer is suggested as the key factor enabling the ultrasensitive photodetection through facilitating the multistep interfacial electronic processes for photocurrent generation. Frontier molecular orbitals overlap effectively in the neighbor π−π stacked C12TBP, which promotes not only the diffusion of photogenerated electron−hole pairs but also dissociation of electron−hole pairs and charge-transfer (CT) state through weakening the electron−hole binding by dispersing charges within C12TBP columns. The separation of CT state is boosted by the large distance between the holes in Gr and the electrons in the edge-on orientation of C12TBP as well. In addition, we found that the structural evolution of the interfacial layer has a significant difference from that of the bulk layers because of the strong adsorption to the substrate. The results provide valuable support for understanding the complicated relationship between the structures and electronic properties of interfacial layers and pave the way for fabricating high-performance organic photodetecting devices.
AB - Developing efficient organic photodetectors and revealing the crucial factor affecting photodetection performances are of importance in varied applications and fundamental researches. In this work, 5,15-bisdodecyl-tetrabenzoporphyrin (C12TBP)/ graphene (Gr) phototransistors were fabricated through in situ retro-Diels−Alder reaction (as-formed), which demonstrates ultrahigh responsivity and specific detectivity, fast response, and broad-band detecting abilities covering UV to near-IR radiations. The interfacial and bulk layers of C12TBP films, defined as the adlayer on Gr sheet and the other part of the films, respectively, were characterized in detail. The π−π stacked edge-on C12TBP/Gr interfacial layer is suggested as the key factor enabling the ultrasensitive photodetection through facilitating the multistep interfacial electronic processes for photocurrent generation. Frontier molecular orbitals overlap effectively in the neighbor π−π stacked C12TBP, which promotes not only the diffusion of photogenerated electron−hole pairs but also dissociation of electron−hole pairs and charge-transfer (CT) state through weakening the electron−hole binding by dispersing charges within C12TBP columns. The separation of CT state is boosted by the large distance between the holes in Gr and the electrons in the edge-on orientation of C12TBP as well. In addition, we found that the structural evolution of the interfacial layer has a significant difference from that of the bulk layers because of the strong adsorption to the substrate. The results provide valuable support for understanding the complicated relationship between the structures and electronic properties of interfacial layers and pave the way for fabricating high-performance organic photodetecting devices.
KW - Density functional theory calculation
KW - Field-effect transistor
KW - Graphene
KW - Interfacial structure
KW - Photodetector
KW - Retro-Diels−Alder reaction
KW - Scanning tunneling microscopy
UR - http://www.scopus.com/inward/record.url?scp=85096138391&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.0c00772
DO - 10.1021/acsaelm.0c00772
M3 - Article
AN - SCOPUS:85096138391
SN - 2637-6113
VL - 2
SP - 3459
EP - 3467
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 10
ER -