TY - GEN
T1 - Fabrication of Continuous Ni Barrier/Seed Layer on Conformal Parylene Liner in TSVs for 3D Packaging and Heterogeneous Integration
AU - Su, Yuwen
AU - Ding, Yingtao
AU - Wang, Han
AU - Yan, Shimeng
AU - Yan, Yangyang
AU - Zhang, Ziyue
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Herein, we demonstrate a low-cost and low-complexity fabrication scheme for TSVs with low-k parylene liner and Ni barrier/seed layer. Two pre-treatment steps are conducted before the formation of the parylene liner by chemical vapor deposition (CVD) and the Ni barrier/seed layer by electroless plating (ELP), respectively. The first one includes the sequential pre-treatments by O2 plasma and a specifically mixed adhesion promotion (AP) solution, which enhances the adhesion between the liner and the substrate. The second one is the surface modification of the parylene liner by a sodium naphthalene solution, which significantly improves the adhesion between Ni and parylene, thus enabling the deposition of a continuous Ni layer in the deep vias. Consequently, TSVs with a diameter of 30 μm and a height of 200 μm are successfully manufactured. This work provides a feasible solution to the demands for low-cost and high-performance TSVs in the 3D packaging and heterogeneous integration applications.
AB - Herein, we demonstrate a low-cost and low-complexity fabrication scheme for TSVs with low-k parylene liner and Ni barrier/seed layer. Two pre-treatment steps are conducted before the formation of the parylene liner by chemical vapor deposition (CVD) and the Ni barrier/seed layer by electroless plating (ELP), respectively. The first one includes the sequential pre-treatments by O2 plasma and a specifically mixed adhesion promotion (AP) solution, which enhances the adhesion between the liner and the substrate. The second one is the surface modification of the parylene liner by a sodium naphthalene solution, which significantly improves the adhesion between Ni and parylene, thus enabling the deposition of a continuous Ni layer in the deep vias. Consequently, TSVs with a diameter of 30 μm and a height of 200 μm are successfully manufactured. This work provides a feasible solution to the demands for low-cost and high-performance TSVs in the 3D packaging and heterogeneous integration applications.
KW - electroless plating (ELP)
KW - Ni barrier/seed layer
KW - parylene liner
KW - surface modification
KW - TSV
UR - http://www.scopus.com/inward/record.url?scp=85206104494&partnerID=8YFLogxK
U2 - 10.1109/ICEPT63120.2024.10668682
DO - 10.1109/ICEPT63120.2024.10668682
M3 - Conference contribution
AN - SCOPUS:85206104494
T3 - 2024 25th International Conference on Electronic Packaging Technology, ICEPT 2024
BT - 2024 25th International Conference on Electronic Packaging Technology, ICEPT 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 25th International Conference on Electronic Packaging Technology, ICEPT 2024
Y2 - 7 August 2024 through 9 August 2024
ER -