Exposure latitude aware source and mask optimization for extreme ultraviolet lithography

Lulu Zou; Yiyu Sun; Pengzhi Wei; Miao Yuan; Zhaoxuan Li; Lihui Liu; Yanqiu Li

doi:10.1364/AO.440528

Exposure latitude aware source and mask optimization for extreme ultraviolet lithography

Lulu Zou
, Yiyu Sun
, Pengzhi Wei
, Miao Yuan
, Zhaoxuan Li
, Lihui Liu
, Yanqiu Li^*

^*Corresponding author for this work

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Extreme ultraviolet (EUV) lithography is a new generation of integrated circuit manufacturing technology with great development prospects. EUV lithography has more significant demand for high exposure latitude (EL) due to greater requirements for the stability of the light source. Source and mask optimization (SMO) technology is widely used to compensate for imaging distortion. In this paper, we propose an EL-aware SMO (ELASMO) method that uses a low-resist threshold sensitivity (LRS) penalty function to improve the EL in EUV lithography. Compared to conventional SMO, the proposed ELASMO method can significantly enhance the aerial image contrast, improve the EL, and enlarge the process window while ensuring high imaging fidelity.

Original language	English
Pages (from-to)	9404-9410
Number of pages	7
Journal	Applied Optics
Volume	60
Issue number	30
DOIs	https://doi.org/10.1364/AO.440528
Publication status	Published - 20 Oct 2021
Externally published	Yes

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10.1364/AO.440528

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title = "Exposure latitude aware source and mask optimization for extreme ultraviolet lithography",

abstract = "Extreme ultraviolet (EUV) lithography is a new generation of integrated circuit manufacturing technology with great development prospects. EUV lithography has more significant demand for high exposure latitude (EL) due to greater requirements for the stability of the light source. Source and mask optimization (SMO) technology is widely used to compensate for imaging distortion. In this paper, we propose an EL-aware SMO (ELASMO) method that uses a low-resist threshold sensitivity (LRS) penalty function to improve the EL in EUV lithography. Compared to conventional SMO, the proposed ELASMO method can significantly enhance the aerial image contrast, improve the EL, and enlarge the process window while ensuring high imaging fidelity.",

author = "Lulu Zou and Yiyu Sun and Pengzhi Wei and Miao Yuan and Zhaoxuan Li and Lihui Liu and Yanqiu Li",

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AU - Zou, Lulu

AU - Sun, Yiyu

AU - Wei, Pengzhi

AU - Yuan, Miao

AU - Li, Zhaoxuan

AU - Liu, Lihui

AU - Li, Yanqiu

PY - 2021/10/20

Y1 - 2021/10/20

N2 - Extreme ultraviolet (EUV) lithography is a new generation of integrated circuit manufacturing technology with great development prospects. EUV lithography has more significant demand for high exposure latitude (EL) due to greater requirements for the stability of the light source. Source and mask optimization (SMO) technology is widely used to compensate for imaging distortion. In this paper, we propose an EL-aware SMO (ELASMO) method that uses a low-resist threshold sensitivity (LRS) penalty function to improve the EL in EUV lithography. Compared to conventional SMO, the proposed ELASMO method can significantly enhance the aerial image contrast, improve the EL, and enlarge the process window while ensuring high imaging fidelity.

AB - Extreme ultraviolet (EUV) lithography is a new generation of integrated circuit manufacturing technology with great development prospects. EUV lithography has more significant demand for high exposure latitude (EL) due to greater requirements for the stability of the light source. Source and mask optimization (SMO) technology is widely used to compensate for imaging distortion. In this paper, we propose an EL-aware SMO (ELASMO) method that uses a low-resist threshold sensitivity (LRS) penalty function to improve the EL in EUV lithography. Compared to conventional SMO, the proposed ELASMO method can significantly enhance the aerial image contrast, improve the EL, and enlarge the process window while ensuring high imaging fidelity.

UR - https://www.scopus.com/pages/publications/85117941453

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DO - 10.1364/AO.440528

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VL - 60

SP - 9404

EP - 9410

JO - Applied Optics

JF - Applied Optics

IS - 30

ER -

Exposure latitude aware source and mask optimization for extreme ultraviolet lithography

Abstract

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