Experimental study on the package of high-g accelerometer

In this paper, the effect of the package die adhesive and package shell on the performances of silicon based MEMS high-g accelerometers was reported. Using Raman spectroscopy, the residual stress caused by different package die adhesive thickness and different package shell material was characterized. It can be concluded from the testing results that: with thicker die adhesive, the residual stress increment was much smaller; the piezoresistance variation caused by this residual stress was much smaller; and the temperature shift of the output voltage was much smaller. Comparing with the ceramic package, the stainless steel package has bigger sensitivity and bigger anti-overload ability.