Estimation of the acceleration ability for electrons in SiO2 and the tunneling effect

Fujun Zhang, Zheng Xu*, Feng Teng, Shengyi Yang, Zhidong Lou, Ling Liu, Lijian Meng, Yanbing Hou, Yongsheng Wang, Xurong Xu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Silicon dioxide (SiO2) plays an important role in layered optimization scheme and solid-state cathodoluminescence (SSCL). Initially, it was believed that the SiO2 layer would (i) generate extra interface states contributing to a number of primary electrons available for exciting the luminescent centers, and/or (ii) act as acceleration layer resulted in gaining high energy for those electrons that would tunnel into the luminescent layer to excite luminescent centers. Based on the brightness vs. voltage (B-V) measurements, we deem that the latter case, i.e. acceleration and tunneling, is the dominant mechanism. A detailed discussion in terms of electrons acceleration and tunneling as the main contributions to the enhancement of brightness is presented.

Original languageEnglish
Pages (from-to)90-94
Number of pages5
JournalJournal of Luminescence
Volume117
Issue number1
DOIs
Publication statusPublished - Mar 2006
Externally publishedYes

Keywords

  • Electron acceleration
  • Inorganic electroluminescence (IEL)
  • Tunneling effect

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