Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

Siyuan Xu; Lining Liu; Guangming Qu; Xingfei Zhang; Chunyang Jia; Songhao Wu; Yuanxiao Ma; Young Jin Lee; Guodong Wang; Ji Hyeon Park; Yiyun Zhang; Xiaoyan Yi; Yeliang Wang; Jinmin Li

doi:10.1063/5.0145193

Erratum: Single β -Ga₂O₃nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

Siyuan Xu
, Lining Liu
, Guangming Qu
, Xingfei Zhang
, Chunyang Jia
, Songhao Wu
, Yuanxiao Ma
, Young Jin Lee
, Guodong Wang
, Ji Hyeon Park^*
, Yiyun Zhang^*
, Xiaoyan Yi
, Yeliang Wang
, Jinmin Li

^*Corresponding author for this work

School of Integrated Circuits and Electronics

CAS - Institute of Semiconductors
University of Chinese Academy of Sciences
Beijing Institute of Technology
Henan Polytechnic University
Korea Institute of Ceramic Engineering And Technology

Research output: Contribution to journal › Comment/debate

Abstract

In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /V_GS- V_thC_G. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

Original language	English
Article number	089901
Journal	Applied Physics Letters
Volume	122
Issue number	8
DOIs	https://doi.org/10.1063/5.0145193
Publication status	Published - 20 Feb 2023

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10.1063/5.0145193

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title = "Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)",

abstract = "In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.",

author = "Siyuan Xu and Lining Liu and Guangming Qu and Xingfei Zhang and Chunyang Jia and Songhao Wu and Yuanxiao Ma and Lee, \{Young Jin\} and Guodong Wang and Park, \{Ji Hyeon\} and Yiyun Zhang and Xiaoyan Yi and Yeliang Wang and Jinmin Li",

year = "2023",

month = feb,

day = "20",

doi = "10.1063/5.0145193",

language = "English",

volume = "122",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Erratum

T2 - Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

AU - Xu, Siyuan

AU - Liu, Lining

AU - Qu, Guangming

AU - Zhang, Xingfei

AU - Jia, Chunyang

AU - Wu, Songhao

AU - Ma, Yuanxiao

AU - Lee, Young Jin

AU - Wang, Guodong

AU - Park, Ji Hyeon

AU - Zhang, Yiyun

AU - Yi, Xiaoyan

AU - Wang, Yeliang

AU - Li, Jinmin

PY - 2023/2/20

Y1 - 2023/2/20

N2 - In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

AB - In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

UR - https://www.scopus.com/pages/publications/85148770540

U2 - 10.1063/5.0145193

DO - 10.1063/5.0145193

M3 - Comment/debate

AN - SCOPUS:85148770540

SN - 0003-6951

VL - 122

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 089901

ER -

Erratum: Single β -Ga₂O₃nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

Abstract

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