Abstract
This article was originally published online on 18 March 2022 with missing and incorrectly numbered reference citations. On page 3, a citation to Ref. 26 has been added in the left column, the last sentence just above Fig. 3. On page 5, in the left column, fifth line of text under heading B 1, the citation has been updated to Refs. 64, 79. On page 6, in the left column, fourth line of text, the citation has been updated to Ref. 88. On page 9, right column, eleventh line of text, the citation is updated to Ref. 90. All online versions of this article were corrected on 22 March 2022. AIP Publishing apologizes for this error.
| Original language | English |
|---|---|
| Article number | 149901 |
| Journal | Journal of Applied Physics |
| Volume | 131 |
| Issue number | 14 |
| DOIs |
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| Publication status | Published - 14 Apr 2022 |
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Dive into the research topics of 'Erratum: Phase-controlled epitaxial growth of MoTe2: Approaching high-quality 2D materials for electronic devices with low contact resistance (Journal of Applied Physics (2022) 131 (110902) DOI: 10.1063/5.0073650)'. Together they form a unique fingerprint.Cite this
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