Abstract
As a new metal oxide active layer semiconductor material, ITZO has received more and more attention and research applications. In order to improve the electrical properties of ITZO thin film transistor, a thin indium IZO film is used as the modified layer to design a double active layer thin film transistor. By adjusting the fabrication process of the IZO layer, a high-performance device with a mobility of 40.1 cm2 (V·s) and a threshold voltage of only −1.34 V was obtained, with a positive bias threshold voltage shift of only 1.07 V.
| Original language | English |
|---|---|
| Pages (from-to) | 768-771 |
| Number of pages | 4 |
| Journal | Digest of Technical Papers - SID International Symposium |
| Volume | 56 |
| Issue number | S1 |
| DOIs | |
| Publication status | Published - 2025 |
| Externally published | Yes |
| Event | International Conference on Display Technology, ICDT 2025 - Xiamen, China Duration: 18 Mar 2025 → 21 Mar 2025 |
Keywords
- dual active layer
- electrical characteristics
- metal oxide semiconductors
- thin-film transistors
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