Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires

Xingqiang Liu, Xiaonian Yang, Guoyun Gao, Zhenyu Yang, Haitao Liu, Qiang Li, Zheng Lou, Guozhen Shen, Lei Liao, Caofeng Pan*, Zhong Lin Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)

Abstract

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W-1, with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W-1 and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Original languageEnglish
Pages (from-to)7451-7457
Number of pages7
JournalACS Nano
Volume10
Issue number8
DOIs
Publication statusPublished - 23 Aug 2016
Externally publishedYes

Keywords

  • MoS
  • field-effect transistor
  • photodetector
  • piezo-phototronic effect
  • self-aligned

Fingerprint

Dive into the research topics of 'Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires'. Together they form a unique fingerprint.

Cite this