Enhancing Hot Carrier Photoelectric Efficiency through the Boosted Collection of Hot Holes via Au/ZrO₂/Si Tunneling Junctions

Metallic nanoparticles can generate photoexcited hot carriers on the femtosecond scale under light excitation, which holds immense significance for applications such as optical communication and ultrafast imaging. In this study, a tunnelling junction structure with ZrO₂ as the dielectric layer is designed and fabricated to achieve efficient hot hole collection between Au nanoparticles and P-type Si. Through characterizations of photoconductive atomic force microscopy, the electrical transition from an ohmic contact to a tunneling junction is confirmed, and the transfer pathway of Au hot holes to P-type Si upon 520 nm excitation is clearly observed. The impact of the tunneling structure on device performance is investigated through the fabrication of Si/ZrO₂/Au/TiO₂ photodiodes. The performance tests show that hot hole collection by the tunneling effect significantly enhances a range of parameters, e.g., external quantum efficiency by 250%. Noticeably, the external quantum efficiency attributed to photogenerated hot carriers under 520 nm excitation is estimated to exceed 2.5%. Moreover, the transient photoresponse of the photodiodes is examined with a typical rising time of less than 20 ns.