Enhanced reliability and precision for internal laser processing of semiconductors using temporal domain strategies

Pol Sopeña*, Andong Wang, Niladri Ganguly, Alexandros Mouskeftaras, David Grojo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultrashort laser processing allows writing three-dimensional patterns in the bulk of most transparent materials. However, for semiconductors like silicon or gallium arsenide this is extremely challenging due to the high refractive index and the detrimental nonlinear propagation and plasma effects in most cases. Nonetheless, by temporally tailoring the laser pulses, we demonstrate solutions for high-performance in-volume laser processing. Notably, by using nanosecond and picosecond pulses or THz-repetition rate bursts of ultrashort pulses we can write micro-sized structures in different semiconductors. With this, we demonstrate laser welding of dissimilar semiconductors, high-aspect ratio optical channels, and stealth dicing of wafers. These demonstrations must open the door for new solutions for monolithic optical devices and quantum technologies in the semiconductor industry.

Original languageEnglish
Title of host publicationNanoscale and Quantum Materials
Subtitle of host publicationFrom Synthesis and Laser Processing to Applications 2025
EditorsAndrei V. Kabashin, Maria Farsari, Masoud Mahjouri-Samani
PublisherSPIE
ISBN (Electronic)9781510684522
DOIs
Publication statusPublished - 2025
Externally publishedYes
EventNanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2025 - San Francisco, United States
Duration: 25 Jan 202527 Jan 2025

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13352
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2025
Country/TerritoryUnited States
CitySan Francisco
Period25/01/2527/01/25

Keywords

  • femtosecond
  • infrared
  • Laser processing
  • semiconductor
  • silicon

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