Enhanced Photodetection Performance of InBiSe₃/ReS₂ Polarization-Sensitive Heterostructure Photodetectors

Individual anisotropic two-dimensional (2D) materials have been widely applied for developing polarization-sensitive photodetectors, but they often suffer from limitations in photoresponsivity, detection range, etc. To overcome these challenges, van der Waals (vdW) heterostructures created by stacking different 2D materials provide a promising solution to enhance the performance of the photoelectronic device. In this work, a novel polarization-sensitive photodetector is developed by leveraging a heterojunction formed by InBiSe₃ and anisotropic ReS₂ nanoflakes. The InBiSe₃/ReS₂ vdW heterostructure devices exhibit excellent photodetection performance with a high photoresponsivity (R) of 7.68 A W⁻¹ and a specific detectivity (D^*) up to 1.26 × 10¹¹ Jones as well as an external quantum efficiency (EQE) of 1790% under 532 nm laser irradiation. Additionally, benefiting from the broadband light absorption of InBiSe₃ crystals together with the pronounced anisotropic electronic and optical characteristics of ReS₂ flakes, the devices demonstrate a broad spectral response range from 402 to 1006 nm with a distinct polarization sensitivity of 1.24. Moreover, the devices exhibit extraordinary optical communication and high contrast polarimetric imaging capacity. This work demonstrates the enhanced photodetection performance with the InBiSe₃/ReS₂ vdW heterostructures operating in a photoconductive mode and illustrates promising application of these heterostructures in integrated optoelectronic systems.