Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing

Qilin Hua; Huaqiang Wu; Bin Gao; He Qian

doi:10.1109/VLSI-TSA.2018.8403855

Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing

Qilin Hua^*, Huaqiang Wu, Bin Gao, He Qian

^*Corresponding author for this work

Tsinghua University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 10⁸ and high on-state current beyond 100 μA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.

Original language	English
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403855
Publication status	Published - 3 Jul 2018
Externally published	Yes
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan, Province of China Duration: 16 Apr 2018 → 19 Apr 2018

Publication series

Name	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	16/04/18 → 19/04/18

Access to Document

10.1109/VLSI-TSA.2018.8403855

Cite this

Hua, Q., Wu, H., Gao, B., & Qian, H. (2018). Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403855

Hua, Qilin ; Wu, Huaqiang ; Gao, Bin et al. / Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

@inproceedings{2461b98b4b87400e89b5f642898eb730,

title = "Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing",

abstract = "Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 μA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.",

author = "Qilin Hua and Huaqiang Wu and Bin Gao and He Qian",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

year = "2018",

month = jul,

day = "3",

doi = "10.1109/VLSI-TSA.2018.8403855",

language = "English",

series = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

address = "United States",

}

Hua, Q, Wu, H, Gao, B & Qian, H 2018, Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, Province of China, 16/04/18. https://doi.org/10.1109/VLSI-TSA.2018.8403855

Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing. / Hua, Qilin; Wu, Huaqiang; Gao, Bin et al.
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hua, Qilin

AU - Wu, Huaqiang

AU - Gao, Bin

AU - Qian, He

PY - 2018/7/3

Y1 - 2018/7/3

N2 - Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 μA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.

AB - Selector devices are typically employed to suppress sneak path currents in RRAM array. Here, we demonstrate a bidirectional Ag- filament threshold switching (TS) selector with an enhanced performance of large selectivity over 108 and high on-state current beyond 100 μA through rapid thermal processing (RTP). The TS selector has more than 100 M cycles endurance and can remain stable switching even when ambient temperature is up to 200°C. The mechanism of the TS selector is analyzed to explain the bidirectional selector characteristics. Indeed, this TS selector would be a good candidate for 1S1R configuration and future high-density 3D RRAM integration.

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DO - 10.1109/VLSI-TSA.2018.8403855

M3 - Conference contribution

AN - SCOPUS:85050506733

T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

SP - 1

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BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

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Hua Q, Wu H, Gao B, Qian H. Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). doi: 10.1109/VLSI-TSA.2018.8403855

Enhanced performance of Ag-filament threshold switching selector by rapid thermal processing

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