Enhanced mid-wavelength infrared focal plane arrays based on photon-trapping in InAs/ InAsSb strained layer superlattices

Haipeng Wang; Jincheng Kong; Gongrong Deng; Yuxiao Zou; Biao Yue; Jian Zhang; Jundong Chen; Hongfu Li; Linwei Song; Xiaodan Gong; Xuchang Zhou; Xiongjun Li; He Ding; Weitao Song

doi:10.1016/j.optcom.2025.132521

Enhanced mid-wavelength infrared focal plane arrays based on photon-trapping in InAs/ InAsSb strained layer superlattices

Haipeng Wang
, Jincheng Kong
, Gongrong Deng
, Yuxiao Zou
, Biao Yue
, Jian Zhang
, Jundong Chen
, Hongfu Li
, Linwei Song
, Xiaodan Gong
, Xuchang Zhou
, Xiongjun Li
, He Ding
, Weitao Song^*

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

Abstract

Infrared detectors performance is often limited by high dark currents and restricted operational temperatures. This study employs femtosecond laser-induced nanostructures on GaSb substrates within InAsSb focal plane arrays (FPAs) to enhance performance. These structures are optimized to maximize infrared light absorption. The enhanced FPAs demonstrate significant performance improvements, achieving quantum efficiencies of up to 42.7 % and reducing the noise-equivalent temperature difference (NETD) to as low as 15.6 mK. The dark current density is 5.7 × 10⁻⁶A/cm² and a high peak detectivity up to 1.34 × 10¹² cm Hz^1/2/W is realized at an operational temperature of 120 K. These advancements enhance durability and thermal stability, making the detectors adaptable to diverse environmental conditions.

Original language	English
Article number	132521
Journal	Optics Communications
Volume	596
DOIs	https://doi.org/10.1016/j.optcom.2025.132521
Publication status	Published - Dec 2025

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10.1016/j.optcom.2025.132521

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@article{c43a59e697fd445690bbc08b7eb201c0,

title = "Enhanced mid-wavelength infrared focal plane arrays based on photon-trapping in InAs/ InAsSb strained layer superlattices",

abstract = "Infrared detectors performance is often limited by high dark currents and restricted operational temperatures. This study employs femtosecond laser-induced nanostructures on GaSb substrates within InAsSb focal plane arrays (FPAs) to enhance performance. These structures are optimized to maximize infrared light absorption. The enhanced FPAs demonstrate significant performance improvements, achieving quantum efficiencies of up to 42.7 \% and reducing the noise-equivalent temperature difference (NETD) to as low as 15.6 mK. The dark current density is 5.7 × 10−6A/cm2 and a high peak detectivity up to 1.34 × 1012 cm Hz1/2/W is realized at an operational temperature of 120 K. These advancements enhance durability and thermal stability, making the detectors adaptable to diverse environmental conditions.",

author = "Haipeng Wang and Jincheng Kong and Gongrong Deng and Yuxiao Zou and Biao Yue and Jian Zhang and Jundong Chen and Hongfu Li and Linwei Song and Xiaodan Gong and Xuchang Zhou and Xiongjun Li and He Ding and Weitao Song",

note = "Publisher Copyright: {\textcopyright} 2025 Elsevier B.V.",

year = "2025",

month = dec,

doi = "10.1016/j.optcom.2025.132521",

language = "English",

volume = "596",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Enhanced mid-wavelength infrared focal plane arrays based on photon-trapping in InAs/ InAsSb strained layer superlattices

AU - Wang, Haipeng

AU - Kong, Jincheng

AU - Deng, Gongrong

AU - Zou, Yuxiao

AU - Yue, Biao

AU - Zhang, Jian

AU - Chen, Jundong

AU - Li, Hongfu

AU - Song, Linwei

AU - Gong, Xiaodan

AU - Zhou, Xuchang

AU - Li, Xiongjun

AU - Ding, He

AU - Song, Weitao

PY - 2025/12

Y1 - 2025/12

N2 - Infrared detectors performance is often limited by high dark currents and restricted operational temperatures. This study employs femtosecond laser-induced nanostructures on GaSb substrates within InAsSb focal plane arrays (FPAs) to enhance performance. These structures are optimized to maximize infrared light absorption. The enhanced FPAs demonstrate significant performance improvements, achieving quantum efficiencies of up to 42.7 % and reducing the noise-equivalent temperature difference (NETD) to as low as 15.6 mK. The dark current density is 5.7 × 10−6A/cm2 and a high peak detectivity up to 1.34 × 1012 cm Hz1/2/W is realized at an operational temperature of 120 K. These advancements enhance durability and thermal stability, making the detectors adaptable to diverse environmental conditions.

AB - Infrared detectors performance is often limited by high dark currents and restricted operational temperatures. This study employs femtosecond laser-induced nanostructures on GaSb substrates within InAsSb focal plane arrays (FPAs) to enhance performance. These structures are optimized to maximize infrared light absorption. The enhanced FPAs demonstrate significant performance improvements, achieving quantum efficiencies of up to 42.7 % and reducing the noise-equivalent temperature difference (NETD) to as low as 15.6 mK. The dark current density is 5.7 × 10−6A/cm2 and a high peak detectivity up to 1.34 × 1012 cm Hz1/2/W is realized at an operational temperature of 120 K. These advancements enhance durability and thermal stability, making the detectors adaptable to diverse environmental conditions.

UR - https://www.scopus.com/pages/publications/105020299071

U2 - 10.1016/j.optcom.2025.132521

DO - 10.1016/j.optcom.2025.132521

M3 - Article

AN - SCOPUS:105020299071

SN - 0030-4018

VL - 596

JO - Optics Communications

JF - Optics Communications

M1 - 132521

ER -

Enhanced mid-wavelength infrared focal plane arrays based on photon-trapping in InAs/ InAsSb strained layer superlattices

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