Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Ziyi Shao; Junting Xiao; Xiao Guo; Siwen You; Yangyang Zhang; Mingjun Li; Fei Song; Conghua Zhou; Haipeng Xie; Yongli Gao; Jiatao Sun; Han Huang

doi:10.1016/j.cap.2022.01.005

Emission properties of sequentially deposited ultrathin CH₃NH₃PbI₃/MoS₂ heterostructures

Ziyi Shao
, Junting Xiao
, Xiao Guo
, Siwen You
, Yangyang Zhang
, Mingjun Li
, Fei Song
, Conghua Zhou
, Haipeng Xie
, Yongli Gao
, Jiatao Sun
, Han Huang^*

^*Corresponding author for this work

School of Physics
Chinese Academy of Sciences
University of Rochester
Beijing Institute of Technology
CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI₂/MoS₂ into the CH₃NH₃PbI₃/MoS₂ heterostructures via CH₃NH₃I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH₃NH₃PbI₃/MoS₂. Both MoS₂ and CH₃NH₃PbI₃ related photoluminescence (PL) intensity quenching in CH₃NH₃PbI₃/MoS₂ implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH₃NH₃PbI₃ is opposite to that of MoS₂ (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH₃NH₃PbI₃/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

Original language	English
Pages (from-to)	27-33
Number of pages	7
Journal	Current Applied Physics
Volume	36
DOIs	https://doi.org/10.1016/j.cap.2022.01.005
Publication status	Published - Apr 2022
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Intercalation
Interfacial interaction
Temperature dependent PL
TypeⅡ energy alignment
vdW epitaxy

Access to Document

10.1016/j.cap.2022.01.005

Cite this

@article{172ae039c8e84fb2b0f02200c05e95ba,

title = "Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures",

abstract = "Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.",

keywords = "Intercalation, Interfacial interaction, Temperature dependent PL, TypeⅡ energy alignment, vdW epitaxy",

author = "Ziyi Shao and Junting Xiao and Xiao Guo and Siwen You and Yangyang Zhang and Mingjun Li and Fei Song and Conghua Zhou and Haipeng Xie and Yongli Gao and Jiatao Sun and Han Huang",

note = "Publisher Copyright: {\textcopyright} 2022 Korean Physical Society",

year = "2022",

month = apr,

doi = "10.1016/j.cap.2022.01.005",

language = "English",

volume = "36",

pages = "27--33",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

AU - Shao, Ziyi

AU - Xiao, Junting

AU - Guo, Xiao

AU - You, Siwen

AU - Zhang, Yangyang

AU - Li, Mingjun

AU - Song, Fei

AU - Zhou, Conghua

AU - Xie, Haipeng

AU - Gao, Yongli

AU - Sun, Jiatao

AU - Huang, Han

PY - 2022/4

Y1 - 2022/4

N2 - Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

AB - Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI2/MoS2 into the CH3NH3PbI3/MoS2 heterostructures via CH3NH3I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH3NH3PbI3/MoS2. Both MoS2 and CH3NH3PbI3 related photoluminescence (PL) intensity quenching in CH3NH3PbI3/MoS2 implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH3NH3PbI3 is opposite to that of MoS2 (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH3NH3PbI3/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.

KW - Intercalation

KW - Interfacial interaction

KW - Temperature dependent PL

KW - TypeⅡ energy alignment

KW - vdW epitaxy

UR - https://www.scopus.com/pages/publications/85122920974

U2 - 10.1016/j.cap.2022.01.005

DO - 10.1016/j.cap.2022.01.005

M3 - Article

AN - SCOPUS:85122920974

SN - 1567-1739

VL - 36

SP - 27

EP - 33

JO - Current Applied Physics

JF - Current Applied Physics

ER -