TY - GEN
T1 - Embedded nanotransducer for ultrahigh-frequency SAW utilizing AlN/diamond layered structure
AU - Wang, L.
AU - Chen, S. M.
AU - Ning, X.
AU - Chen, Z.
AU - Liu, J. T.
AU - Zhang, J. Y.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.
AB - In this work, we report the development and realization of ultrahigh-frequency, high-performance nano interdigital transducers (n-IDTs) for generation of surface acoustic wave (SAW) on aluminum nitride (AlN)/diamond/Si substrates, where the metal fingers are embedded in the AlN film. The well-defined n-IDTs' resolution down to 200 nm were obtained using electron beam lithography, inductively coupled plasma (ICP) etching and lift-off processing. The fabricated SAW resonators exhibit response at a ultrahigh-frequency range, as high as 9.94 GHz, with stronger intensities of S11 peaks compared with normal transducer devices. The good high-frequency characteristics of the embedded n-IDTs and compatibility with existing fabrication technologies pave the way for the realization of advanced sensors and monolithic integrated MMICs on AlN/diamond/Si substrates for the high frequency and high power applications.
KW - embedded nanotransducer
KW - layered structure
KW - surface acoustic wave
KW - ultrahigh-high frequency
UR - https://www.scopus.com/pages/publications/85028535321
U2 - 10.1109/ISAF.2017.8000223
DO - 10.1109/ISAF.2017.8000223
M3 - Conference contribution
AN - SCOPUS:85028535321
T3 - 2017 Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices and Piezoresponse Force Microscopy Workshop, ISAF-IWATMD-PFM 2017 - Conference
SP - 106
EP - 109
BT - 2017 Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices and Piezoresponse Force Microscopy Workshop, ISAF-IWATMD-PFM 2017 - Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Joint IEEE International Symposium on Applications of Ferroelectrics, International Workshop on Acoustic Transduction Materials and Devices and Piezoresponse Force Microscopy Workshop, ISAF-IWATMD-PFM 2017
Y2 - 7 May 2017 through 11 May 2017
ER -