Abstract
Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.
Original language | English |
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Pages (from-to) | 725-728 |
Number of pages | 4 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 12 |
Issue number | 12 |
DOIs | |
Publication status | Published - Dec 2001 |
Externally published | Yes |