Ellipsometry study of InN thin films prepared by magnetron sputtering

F. Li, D. Mo*, C. B. Cao, Y. L. Zhang, H. L.W. Chan, C. L. Choy

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Indium nitride (INN) thin films have been deposited on Si(100) substrates at temperature of 100-400°C by reactive radio frequency (RF) magnetron sputtering. We measured the ellipsometric spectra of the InN film samples, and obtained the optical constants for the wavelength range of 410-1100 nm. The absorption edge of the InN films is 1.85-1.90 eV. The thicknesses of various InN films are found to be dependent on the substrate temperature.

Original languageEnglish
Pages (from-to)725-728
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume12
Issue number12
DOIs
Publication statusPublished - Dec 2001
Externally publishedYes

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