TY - JOUR
T1 - Electron-limiting defect complex in hyperdoped GaAs
T2 - The DDX center
AU - Ma, Jie
AU - Wei, Su Huai
PY - 2013/3/29
Y1 - 2013/3/29
N2 - The physical properties and chemical trends of defects in GaAs under the hyperdoping situation are investigated and found to be very different from those in the impurity limit. We show that at high dopant concentrations, a defect complex denoted as the DDX center becomes the dominant "killer" to limit the electron carrier concentration, whereas in the impurity limit, the electron carrier concentration is usually limited by the well-known DX center. The DDX center shows some opposite chemical trends compared to the DX center. For example, to avoid the DX center, anion site donors are preferred, but to avoid the DDX center, cation site donors are better. Our proposed mechanism is able to explain some puzzling experimental observations.
AB - The physical properties and chemical trends of defects in GaAs under the hyperdoping situation are investigated and found to be very different from those in the impurity limit. We show that at high dopant concentrations, a defect complex denoted as the DDX center becomes the dominant "killer" to limit the electron carrier concentration, whereas in the impurity limit, the electron carrier concentration is usually limited by the well-known DX center. The DDX center shows some opposite chemical trends compared to the DX center. For example, to avoid the DX center, anion site donors are preferred, but to avoid the DDX center, cation site donors are better. Our proposed mechanism is able to explain some puzzling experimental observations.
UR - http://www.scopus.com/inward/record.url?scp=84875713018&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.87.115210
DO - 10.1103/PhysRevB.87.115210
M3 - Article
AN - SCOPUS:84875713018
SN - 1098-0121
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 11
M1 - 115210
ER -