Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

Chao Li; Chuan Bao Cao; He Sun Zhu

Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

Chao Li^*
, Chuan Bao Cao
, He Sun Zhu

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C₃N₄. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap E_opt of CN_x films determined by Tauc's relation was wide, and the E_opt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.

Original language	English
Pages (from-to)	86-89
Number of pages	4
Journal	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
Volume	24
Issue number	1
Publication status	Published - Jan 2004

Keywords

Carbon nitride
Electrodeposition
Optical band gap

Cite this

@article{5451e0cc74584a65bfa205eb19772ae7,

title = "Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass",

abstract = "Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.",

keywords = "Carbon nitride, Electrodeposition, Optical band gap",

author = "Chao Li and Cao, \{Chuan Bao\} and Zhu, \{He Sun\}",

year = "2004",

month = jan,

language = "English",

volume = "24",

pages = "86--89",

journal = "Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology",

issn = "1001-0645",

publisher = "Beijing Institute of Technology",

number = "1",

}

TY - JOUR

T1 - Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

AU - Li, Chao

AU - Cao, Chuan Bao

AU - Zhu, He Sun

PY - 2004/1

Y1 - 2004/1

N2 - Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.

AB - Saturated solution of dicyandiamide in acetonitrile was selected as the electrolyte in an attempt to deposit carbon nitride films onto glass substrates coated with indium tin oxide (ITO-coated glass). The result of X-ray photoelectron spectroscopy (XPS) showed that the maximum value of the N/C atomic ratio in the films was 1.22, which was quite close to the stoichiometric value of C3N4. Fourier transform infrared (FTIR) spectroscopy supported the existence of C-N, C=N covalent bonds. Optical band gap Eopt of CNx films determined by Tauc's relation was wide, and the Eopt of the sample obtained at 50°C, 1250 V was 2.32 eV. It was found that carbon nitride films of high nitrogen content could be obtained under the conditions of voltages from 1100 V to 1300 V and temperatures from 30°C to 50°C.

KW - Carbon nitride

KW - Electrodeposition

KW - Optical band gap

UR - https://www.scopus.com/pages/publications/2942522999

M3 - Article

AN - SCOPUS:2942522999

SN - 1001-0645

VL - 24

SP - 86

EP - 89

JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 1

ER -

Electrodeposition of carbon nitride thin films having high nitrogen content on indium tin oxide coated glass

Abstract

Keywords

Other files and links

Fingerprint

Cite this