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Electrochemical performance of CuO thin film deposited by RF reactive magnetron sputtering

  • Zhen Liu*
  • , Feng Wu
  • , Fang Wang
  • *Corresponding author for this work
  • Beijing Institute of Technology
  • Tsinghua University

Research output: Contribution to journalArticlepeer-review

Abstract

Copper oxide thin films were deposited on stainless substrates by reactive RF magnetron sputtering, use a copper target and an oxygen gas atmosphere. The films were characterised by XRD and AFM. The CuO thin films deposited at room temperature delivered higher capacity of 785μAh/(cm2 · μm) in the first discharge process than the films deposited at 300°C, and the latter have better cycling reversibility. The AC impedance show that diffusion coefficient is about 2.46 × 10-15cm2/s.

Original languageEnglish
Pages (from-to)1149-1151
Number of pages3
JournalGongneng Cailiao/Journal of Functional Materials
Volume38
Issue number7
Publication statusPublished - Jul 2007
Externally publishedYes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • CuO thin film
  • RF magnetron sputtering
  • Thin film lithium-ion battery

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