Electrical and optical properties of ZnO:Al films with different hydrogen contents in sputtering gas

Fei Qu; Teng Zhang; Hong Wei Gu; Qing Quan Qiu; Fa Zhu Ding; Xing Yu Peng; Hong Yan Wang

doi:10.1007/s12598-014-0435-8

Electrical and optical properties of ZnO:Al films with different hydrogen contents in sputtering gas

Fei Qu^*, Teng Zhang, Hong Wei Gu, Qing Quan Qiu, Fa Zhu Ding, Xing Yu Peng, Hong Yan Wang

^*Corresponding author for this work

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Aluminum-doped zinc oxide (ZnO:Al) films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temperature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO:Al films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO:Al films and plays an important role in the properties of ZnO:Al films. The electrical conductivity and infrared (IR) reflectance are improved due to the increase of electron carrier concentration, and the average transmittance decreases, which is ascribed to the strong scattering from the hydrogen incorporated and oxygen vacancies in ZnO:Al films. In this study, the resistivity of 5.5 × 10⁻⁴ Ω·cm is obtained, the average transmittance of the wavelength in the range of 400–900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of competition between Burstein–Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.

Original language	English
Pages (from-to)	173-177
Number of pages	5
Journal	Rare Metals
Volume	34
Issue number	3
DOIs	https://doi.org/10.1007/s12598-014-0435-8
Publication status	Published - Mar 2015
Externally published	Yes

Keywords

Electrical resistivity
Hydrogen
IR reflectance
Transmittance
ZnO:Al thin films

Access to Document

10.1007/s12598-014-0435-8

Cite this

@article{753a33e6f5a948e781eec0c490ed2a61,

title = "Electrical and optical properties of ZnO:Al films with different hydrogen contents in sputtering gas",

abstract = "Aluminum-doped zinc oxide (ZnO:Al) films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temperature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO:Al films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO:Al films and plays an important role in the properties of ZnO:Al films. The electrical conductivity and infrared (IR) reflectance are improved due to the increase of electron carrier concentration, and the average transmittance decreases, which is ascribed to the strong scattering from the hydrogen incorporated and oxygen vacancies in ZnO:Al films. In this study, the resistivity of 5.5 × 10−4 Ω·cm is obtained, the average transmittance of the wavelength in the range of 400–900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of competition between Burstein–Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.",

keywords = "Electrical resistivity, Hydrogen, IR reflectance, Transmittance, ZnO:Al thin films",

author = "Fei Qu and Teng Zhang and Gu, {Hong Wei} and Qiu, {Qing Quan} and Ding, {Fa Zhu} and Peng, {Xing Yu} and Wang, {Hong Yan}",

note = "Publisher Copyright: {\textcopyright} 2015, The Nonferrous Metals Society of China and Springer-Verlag Berlin Heidelberg.",

year = "2015",

month = mar,

doi = "10.1007/s12598-014-0435-8",

language = "English",

volume = "34",

pages = "173--177",

journal = "Rare Metals",

issn = "1001-0521",

publisher = "Springer International Publishing",

number = "3",

}

TY - JOUR

T1 - Electrical and optical properties of ZnO:Al films with different hydrogen contents in sputtering gas

AU - Qu, Fei

AU - Zhang, Teng

AU - Gu, Hong Wei

AU - Qiu, Qing Quan

AU - Ding, Fa Zhu

AU - Peng, Xing Yu

AU - Wang, Hong Yan

PY - 2015/3

Y1 - 2015/3

N2 - Aluminum-doped zinc oxide (ZnO:Al) films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temperature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO:Al films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO:Al films and plays an important role in the properties of ZnO:Al films. The electrical conductivity and infrared (IR) reflectance are improved due to the increase of electron carrier concentration, and the average transmittance decreases, which is ascribed to the strong scattering from the hydrogen incorporated and oxygen vacancies in ZnO:Al films. In this study, the resistivity of 5.5 × 10−4 Ω·cm is obtained, the average transmittance of the wavelength in the range of 400–900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of competition between Burstein–Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.

AB - Aluminum-doped zinc oxide (ZnO:Al) films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temperature. The influences of hydrogen content in sputtering gas on the structural, optical, and electrical properties of ZnO:Al films were systematically investigated. It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnO:Al films and plays an important role in the properties of ZnO:Al films. The electrical conductivity and infrared (IR) reflectance are improved due to the increase of electron carrier concentration, and the average transmittance decreases, which is ascribed to the strong scattering from the hydrogen incorporated and oxygen vacancies in ZnO:Al films. In this study, the resistivity of 5.5 × 10−4 Ω·cm is obtained, the average transmittance of the wavelength in the range of 400–900 nm is almost 86 %, and the IR reflectance reaches 75 % at 2,500 nm, which is higher than that of reported TCO films. The band gap determined by optical absorption is a result of competition between Burstein–Moss effect and many-body perturbation effect. However, the hydrogen content in sputtering gas is above 10 %, and the optical band gap shift is independent of hydrogen content in sputtering gas.

KW - Electrical resistivity

KW - Hydrogen

KW - IR reflectance

KW - Transmittance

KW - ZnO:Al thin films

UR - http://www.scopus.com/inward/record.url?scp=84925538512&partnerID=8YFLogxK

U2 - 10.1007/s12598-014-0435-8

DO - 10.1007/s12598-014-0435-8

M3 - Article

AN - SCOPUS:84925538512

SN - 1001-0521

VL - 34

SP - 173

EP - 177

JO - Rare Metals

JF - Rare Metals

IS - 3

ER -

Electrical and optical properties of ZnO:Al films with different hydrogen contents in sputtering gas

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this