Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

Jingxue Du; Jing Yang; Weijun Fan; Lijie Shi

doi:10.1016/j.physleta.2023.128922

Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

Jingxue Du, Jing Yang, Weijun Fan, Lijie Shi^*

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices.

Original language	English
Article number	128922
Journal	Physics Letters, Section A: General, Atomic and Solid State Physics
Volume	478
DOIs	https://doi.org/10.1016/j.physleta.2023.128922
Publication status	Published - 5 Aug 2023

Keywords

Band offset
Electric field
GeTe/SnSe van der Waals heterojunction
Phase transition

Access to Document

10.1016/j.physleta.2023.128922

Cite this

@article{754ac01a03704af7957c2da4c7401787,

title = "Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction",

abstract = "The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices.",

keywords = "Band offset, Electric field, GeTe/SnSe van der Waals heterojunction, Phase transition",

author = "Jingxue Du and Jing Yang and Weijun Fan and Lijie Shi",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = aug,

day = "5",

doi = "10.1016/j.physleta.2023.128922",

language = "English",

volume = "478",

journal = "Physics Letters, Section A: General, Atomic and Solid State Physics",

issn = "0375-9601",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

AU - Du, Jingxue

AU - Yang, Jing

AU - Fan, Weijun

AU - Shi, Lijie

PY - 2023/8/5

Y1 - 2023/8/5

N2 - The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices.

AB - The electronic structure and optical property of GeTe/SnSe van der Waals heterojunction are investigated by first-principles method. We find GeTe/SnSe van der Waals heterojunction is a type-II heterojunction with an indirect band gap of 0.71 eV. The band gap can be tuned and semiconductor-semimetal phase transition is observed under both positive and negative electric field. The band offset of GeTe/SnSe van der Waals heterojunction can be controlled, and thus the potential barrier can be controlled by applying a gate voltage. Combined with the calculation of effective mass and absorption spectrum we predict that GeTe/SnSe van der Waals heterojunction has important applications in the fields of solar cell and photodetector devices.

KW - Band offset

KW - Electric field

KW - GeTe/SnSe van der Waals heterojunction

KW - Phase transition

UR - http://www.scopus.com/inward/record.url?scp=85160406427&partnerID=8YFLogxK

U2 - 10.1016/j.physleta.2023.128922

DO - 10.1016/j.physleta.2023.128922

M3 - Article

AN - SCOPUS:85160406427

SN - 0375-9601

VL - 478

JO - Physics Letters, Section A: General, Atomic and Solid State Physics

JF - Physics Letters, Section A: General, Atomic and Solid State Physics

M1 - 128922

ER -

Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this