Efficient CuInS                         2                         /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer

Qilin Yuan; Xin Guan; Xulan Xue; Dengbao Han; Haizheng Zhong; Han Zhang; Hanzhuang Zhang; Wenyu Ji

doi:10.1002/pssr.201800575

Efficient CuInS ₂ /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer

Qilin Yuan, Xin Guan, Xulan Xue, Dengbao Han, Haizheng Zhong, Han Zhang, Hanzhuang Zhang^*, Wenyu Ji

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Letter › peer-review

34 Citations (Scopus)

Abstract

In this study, the enhanced device performance of CuInS ₂ /ZnS quantum dots-based light-emitting didoes (QLEDs) for photomedical applications using polyethylenimine ethoxylated (PEIE)-modified ZnO as electron transport layer has been reported. The device enhancement is investigated by applying time-resolved photoluminescence and transient electroluminescence spectra. The results show that the modification of PEIE on ZnO layer limits the electron injection into quantum dots layer and reduces the accumulation of electrons at ZnO/QD interface. This provides an effective way to suppress the charging processes of quantum dots and thus enhance the device efficiency. As a result, the synergistic effect of PEIE modifying layer leads to a record current efficiency of 2.75 cd A ⁻¹ for the CuInS ₂ /ZnS-based QLEDs with deep red emission at 650 nm.

Original language	English
Article number	1800575
Journal	Physica Status Solidi - Rapid Research Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201800575
Publication status	Published - May 2019

Keywords

exciton quenching
modifying layer
quantum dot light-emitting devices
transient electroluminescence

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10.1002/pssr.201800575

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Yuan, Q., Guan, X., Xue, X., Han, D., Zhong, H., Zhang, H., Zhang, H., & Ji, W. (2019). Efficient CuInS ₂ /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer Physica Status Solidi - Rapid Research Letters, 13(5), Article 1800575. https://doi.org/10.1002/pssr.201800575

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title = " Efficient CuInS 2 /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer ",

abstract = " In this study, the enhanced device performance of CuInS 2 /ZnS quantum dots-based light-emitting didoes (QLEDs) for photomedical applications using polyethylenimine ethoxylated (PEIE)-modified ZnO as electron transport layer has been reported. The device enhancement is investigated by applying time-resolved photoluminescence and transient electroluminescence spectra. The results show that the modification of PEIE on ZnO layer limits the electron injection into quantum dots layer and reduces the accumulation of electrons at ZnO/QD interface. This provides an effective way to suppress the charging processes of quantum dots and thus enhance the device efficiency. As a result, the synergistic effect of PEIE modifying layer leads to a record current efficiency of 2.75 cd A −1 for the CuInS 2 /ZnS-based QLEDs with deep red emission at 650 nm.",

keywords = "exciton quenching, modifying layer, quantum dot light-emitting devices, transient electroluminescence",

author = "Qilin Yuan and Xin Guan and Xulan Xue and Dengbao Han and Haizheng Zhong and Han Zhang and Hanzhuang Zhang and Wenyu Ji",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2019",

month = may,

doi = "10.1002/pssr.201800575",

language = "English",

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Yuan, Q, Guan, X, Xue, X, Han, D, Zhong, H, Zhang, H, Zhang, H & Ji, W 2019, ' Efficient CuInS ₂ /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer ', Physica Status Solidi - Rapid Research Letters, vol. 13, no. 5, 1800575. https://doi.org/10.1002/pssr.201800575

Efficient CuInS ₂ /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer . / Yuan, Qilin; Guan, Xin; Xue, Xulan et al.
In: Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 5, 1800575, 05.2019.

Research output: Contribution to journal › Letter › peer-review

TY - JOUR

T1 - Efficient CuInS 2 /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer

AU - Yuan, Qilin

AU - Guan, Xin

AU - Xue, Xulan

AU - Han, Dengbao

AU - Zhong, Haizheng

AU - Zhang, Han

AU - Zhang, Hanzhuang

AU - Ji, Wenyu

PY - 2019/5

Y1 - 2019/5

N2 - In this study, the enhanced device performance of CuInS 2 /ZnS quantum dots-based light-emitting didoes (QLEDs) for photomedical applications using polyethylenimine ethoxylated (PEIE)-modified ZnO as electron transport layer has been reported. The device enhancement is investigated by applying time-resolved photoluminescence and transient electroluminescence spectra. The results show that the modification of PEIE on ZnO layer limits the electron injection into quantum dots layer and reduces the accumulation of electrons at ZnO/QD interface. This provides an effective way to suppress the charging processes of quantum dots and thus enhance the device efficiency. As a result, the synergistic effect of PEIE modifying layer leads to a record current efficiency of 2.75 cd A −1 for the CuInS 2 /ZnS-based QLEDs with deep red emission at 650 nm.

AB - In this study, the enhanced device performance of CuInS 2 /ZnS quantum dots-based light-emitting didoes (QLEDs) for photomedical applications using polyethylenimine ethoxylated (PEIE)-modified ZnO as electron transport layer has been reported. The device enhancement is investigated by applying time-resolved photoluminescence and transient electroluminescence spectra. The results show that the modification of PEIE on ZnO layer limits the electron injection into quantum dots layer and reduces the accumulation of electrons at ZnO/QD interface. This provides an effective way to suppress the charging processes of quantum dots and thus enhance the device efficiency. As a result, the synergistic effect of PEIE modifying layer leads to a record current efficiency of 2.75 cd A −1 for the CuInS 2 /ZnS-based QLEDs with deep red emission at 650 nm.

KW - exciton quenching

KW - modifying layer

KW - quantum dot light-emitting devices

KW - transient electroluminescence

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DO - 10.1002/pssr.201800575

M3 - Letter

AN - SCOPUS:85059173743

SN - 1862-6254

VL - 13

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

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M1 - 1800575

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Yuan Q, Guan X, Xue X, Han D, Zhong H, Zhang H et al. Efficient CuInS ₂ /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer Physica Status Solidi - Rapid Research Letters. 2019 May;13(5):1800575. doi: 10.1002/pssr.201800575

Efficient CuInS ₂ /ZnS Quantum Dots Light-Emitting Diodes in Deep Red Region Using PEIE Modified ZnO Electron Transport Layer

Abstract

Keywords

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