Abstract
Step recovery diode (SRD) is the kernel of ultra-wideband (UWB) fuze generating a narrow pulse signal, and the parameters of SRD can affect the amplitude and width of narrow pulse signal. A SRD model is established based on the semiconductor device theory and SRD operating states, and the effects of SRD parameters on forward bias admittance and reverse bias barrier capacitance are studied. According to narrow pulse generating equivalent circuit, a circuit transient analysis method is used to solve the expression of narrow pulse amplitude and width. The relationships among SRD minority carrier lifetime, reverse saturation current, bias junction capacitance, doping distribution coefficient, narrow pulse amplitude and pulse width are studied through simulation. The simulated results show that the amplitude and pulse width of narrow pulse can be adjusted by changing SRD parameters. The correctness of simulated results is verified by comparing with the generated narrow pulse.
| Original language | English |
|---|---|
| Pages (from-to) | 1490-1497 |
| Number of pages | 8 |
| Journal | Binggong Xuebao/Acta Armamentarii |
| Volume | 38 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1 Aug 2017 |
Keywords
- Minority carrier lifetime
- Narrow pulse
- Ordnance science and technology
- Step recovery diode
- UWB fuze
- Zero bias junction capacitance
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