Abstract
Nitrogen doped ZnO films were prepared by magnetron sputtering. We studied the influence of nitrogen partial pressure pn and oxygen partial pressure po on the microstructure, morphology and optical properties of the thin films. The results show that different defects influence the structure and optical behavior of the films. Doping-related tensile stress turns compressive, owing to a different N-doping form in the films. Red-shift of absorption edge was observed with increasing pn and decreasing po. Band-gap narrowing is improved by increasing nitrogen substitute and oxygen vacancies.
| Original language | English |
|---|---|
| Pages (from-to) | 123-126 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 165 |
| DOIs | |
| Publication status | Published - 15 Feb 2016 |
| Externally published | Yes |
Keywords
- N-doping
- Optical materials and properties
- Sputtering
- Thin films
- ZnO
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