Effects of Mo buffer layer on properties of Mo/Cu electrode stack

The Mo/Cu electrode stack, with a resistivity (2.28 μΩ·cm) much lower than that of the conventional Al/Nd alloy films, was deposited by DC magnetron sputtering on glass substrates. The impacts of the deposition conditions, including the Mo buffer layer thickness, pressure, and annealing temperature, on properties of the Mo/Cu electrode stack were evaluated. The results show that the Mo buffer layer significantly increased the adhesion at the Cu/glass interface, effectively blocked diffusion of Cu into the amorphous Si film, and markedly eliminated the bad influence of Cu diffusion on the active layer of a thin film transistor. We suggest that the use of stack structured Mo/Cu electrode, as the scan and data lines in fabrication of ultra-large sized, high resolution flat panel displays, may be a solution to the signal delay problem.