Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

Jian Guo; Zhinong Yu; Wei Yan; Dawei Shi; Jianshe Xue; Wei Xue

doi:10.1002/SDTP.13642

Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

Jian Guo, Zhinong Yu^*, Wei Yan, Dawei Shi, Jianshe Xue, Wei Xue

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

—We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high I_on/I_off current ratio 3.79×10⁸ is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO₂/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (I_on) and drain saturation voltage (V_dsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.

Original language	English
Title of host publication	Digest of Technical Papers - SID International Symposium
Editors	Baoping Wang, Chi-Ming Che, Ching W. Tang, Han-Ping D. Shieh, Hoi S. Kwok, Hongxing Xu, Ming Liu, Qionghai Dai, Shou Peng, Vivian Wing-Wah Yam, Wei Huang, Xiaomo Wang, Yong Cao, Youliao Zheng, Yue Hao, Yunqi Liu, Zhongcan Ouyang, Zhonglin Wang, Zuyan Xu
Publisher	John Wiley and Sons Inc.
Pages	766-770
Number of pages	5
Edition	S1
ISBN (Electronic)	9781510896161, 9781510896161, 9781510896161
DOIs	https://doi.org/10.1002/SDTP.13642
Publication status	Published - 2019
Externally published	Yes
Event	International Conference on Display Technology, ICDT 2019 - Suzhou, China Duration: 26 Mar 2019 → 29 Mar 2019

Publication series

Name	Digest of Technical Papers - SID International Symposium
Number	S1
Volume	50
ISSN (Print)	0097-966X
ISSN (Electronic)	2168-0159

Conference

Conference	International Conference on Display Technology, ICDT 2019
Country/Territory	China
City	Suzhou
Period	26/03/19 → 29/03/19

Keywords

Bridged-grain (BG)
Hot-carrier effect (HC effect)
Index Terms—low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs)
Lightly doped drain (LDD)
Reliability

Access to Document

10.1002/SDTP.13642

Cite this

Guo, J., Yu, Z., Yan, W., Shi, D., Xue, J., & Xue, W. (2019). Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs. In B. Wang, C.-M. Che, C. W. Tang, H.-P. D. Shieh, H. S. Kwok, H. Xu, M. Liu, Q. Dai, S. Peng, V. W.-W. Yam, W. Huang, X. Wang, Y. Cao, Y. Zheng, Y. Hao, Y. Liu, Z. Ouyang, Z. Wang, & Z. Xu (Eds.), Digest of Technical Papers - SID International Symposium (S1 ed., pp. 766-770). (Digest of Technical Papers - SID International Symposium; Vol. 50, No. S1). John Wiley and Sons Inc.. https://doi.org/10.1002/SDTP.13642

Guo, Jian ; Yu, Zhinong ; Yan, Wei et al. / Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs. Digest of Technical Papers - SID International Symposium. editor / Baoping Wang ; Chi-Ming Che ; Ching W. Tang ; Han-Ping D. Shieh ; Hoi S. Kwok ; Hongxing Xu ; Ming Liu ; Qionghai Dai ; Shou Peng ; Vivian Wing-Wah Yam ; Wei Huang ; Xiaomo Wang ; Yong Cao ; Youliao Zheng ; Yue Hao ; Yunqi Liu ; Zhongcan Ouyang ; Zhonglin Wang ; Zuyan Xu. S1. ed. John Wiley and Sons Inc., 2019. pp. 766-770 (Digest of Technical Papers - SID International Symposium; S1).

@inproceedings{4650c40dd4d8493e97fa705a1375e493,

title = "Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs",

abstract = "—We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79×108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.",

keywords = "Bridged-grain (BG), Hot-carrier effect (HC effect), Index Terms—low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs), Lightly doped drain (LDD), Reliability",

author = "Jian Guo and Zhinong Yu and Wei Yan and Dawei Shi and Jianshe Xue and Wei Xue",

note = "Publisher Copyright: {\textcopyright} 2019, John Wiley and Sons Inc. All rights reserved.; International Conference on Display Technology, ICDT 2019 ; Conference date: 26-03-2019 Through 29-03-2019",

year = "2019",

doi = "10.1002/SDTP.13642",

language = "English",

series = "Digest of Technical Papers - SID International Symposium",

publisher = "John Wiley and Sons Inc.",

number = "S1",

pages = "766--770",

editor = "Baoping Wang and Chi-Ming Che and Tang, \{Ching W.\} and Shieh, \{Han-Ping D.\} and Kwok, \{Hoi S.\} and Hongxing Xu and Ming Liu and Qionghai Dai and Shou Peng and Yam, \{Vivian Wing-Wah\} and Wei Huang and Xiaomo Wang and Yong Cao and Youliao Zheng and Yue Hao and Yunqi Liu and Zhongcan Ouyang and Zhonglin Wang and Zuyan Xu",

booktitle = "Digest of Technical Papers - SID International Symposium",

address = "United States",

edition = "S1",

}

Guo, J, Yu, Z, Yan, W, Shi, D, Xue, J & Xue, W 2019, Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs. in B Wang, C-M Che, CW Tang, H-PD Shieh, HS Kwok, H Xu, M Liu, Q Dai, S Peng, VW-W Yam, W Huang, X Wang, Y Cao, Y Zheng, Y Hao, Y Liu, Z Ouyang, Z Wang & Z Xu (eds), Digest of Technical Papers - SID International Symposium. S1 edn, Digest of Technical Papers - SID International Symposium, no. S1, vol. 50, John Wiley and Sons Inc., pp. 766-770, International Conference on Display Technology, ICDT 2019, Suzhou, China, 26/03/19. https://doi.org/10.1002/SDTP.13642

Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs. / Guo, Jian; Yu, Zhinong; Yan, Wei et al.
Digest of Technical Papers - SID International Symposium. ed. / Baoping Wang; Chi-Ming Che; Ching W. Tang; Han-Ping D. Shieh; Hoi S. Kwok; Hongxing Xu; Ming Liu; Qionghai Dai; Shou Peng; Vivian Wing-Wah Yam; Wei Huang; Xiaomo Wang; Yong Cao; Youliao Zheng; Yue Hao; Yunqi Liu; Zhongcan Ouyang; Zhonglin Wang; Zuyan Xu. S1. ed. John Wiley and Sons Inc., 2019. p. 766-770 (Digest of Technical Papers - SID International Symposium; Vol. 50, No. S1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

AU - Guo, Jian

AU - Yu, Zhinong

AU - Yan, Wei

AU - Shi, Dawei

AU - Xue, Jianshe

AU - Xue, Wei

PY - 2019

Y1 - 2019

N2 - —We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79×108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.

AB - —We lead the lightly doped drain (LDD) structure into the bridged-grain (BG) poly-Si thin film transistor (TFT). This combined structure can restrain the gate induced drain leakage current (GIDL) and the electrical characteristics shows not much sacrifice. A high Ion/Ioff current ratio 3.79×108 is achieved. Besides, the device reliability is improved significantly. Because the lateral electrical field decreases by LDD, lower trap state density is generated in the SiO2/poly-Si interface and the grain boundaries of poly-Si near the surface conduction channel, resulting in the stable on-state drive current (Ion) and drain saturation voltage (Vdsat). All test results indicate that the BG poly-Si TFT with a LDD structure will work well and has a great potential for system-on-panel application.

KW - Bridged-grain (BG)

KW - Hot-carrier effect (HC effect)

KW - Index Terms—low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs)

KW - Lightly doped drain (LDD)

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=85134197787&partnerID=8YFLogxK

U2 - 10.1002/SDTP.13642

DO - 10.1002/SDTP.13642

M3 - Conference contribution

AN - SCOPUS:85134197787

T3 - Digest of Technical Papers - SID International Symposium

SP - 766

EP - 770

BT - Digest of Technical Papers - SID International Symposium

A2 - Wang, Baoping

A2 - Che, Chi-Ming

A2 - Tang, Ching W.

A2 - Shieh, Han-Ping D.

A2 - Kwok, Hoi S.

A2 - Xu, Hongxing

A2 - Liu, Ming

A2 - Dai, Qionghai

A2 - Peng, Shou

A2 - Yam, Vivian Wing-Wah

A2 - Huang, Wei

A2 - Wang, Xiaomo

A2 - Cao, Yong

A2 - Zheng, Youliao

A2 - Hao, Yue

A2 - Liu, Yunqi

A2 - Ouyang, Zhongcan

A2 - Wang, Zhonglin

A2 - Xu, Zuyan

PB - John Wiley and Sons Inc.

T2 - International Conference on Display Technology, ICDT 2019

Y2 - 26 March 2019 through 29 March 2019

ER -

Guo J, Yu Z, Yan W, Shi D, Xue J, Xue W. Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs. In Wang B, Che CM, Tang CW, Shieh HPD, Kwok HS, Xu H, Liu M, Dai Q, Peng S, Yam VWW, Huang W, Wang X, Cao Y, Zheng Y, Hao Y, Liu Y, Ouyang Z, Wang Z, Xu Z, editors, Digest of Technical Papers - SID International Symposium. S1 ed. John Wiley and Sons Inc. 2019. p. 766-770. (Digest of Technical Papers - SID International Symposium; S1). doi: 10.1002/SDTP.13642

Effects of lightly Doped Drain Structure in n-channel ELA Bridged-Grain Poly-Si TFTs

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this