Effect of Se vapor concentration on CIGS film preparation

Cheng Liao; Jun Feng Han; Tao Jiang; Hua Mu Xie; Fei Jiao; Kui Zhao

doi:10.3866/pku.whxb20110231

Effect of Se vapor concentration on CIGS film preparation

Cheng Liao^*, Jun Feng Han, Tao Jiang, Hua Mu Xie, Fei Jiao, Kui Zhao

^*Corresponding author for this work

Peking University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We applied the "selenization of stack element layers" method to the preparation of Cuin_1-xGa_xSe₂ (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W · m^-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5% was obtained.

Original language	English
Pages (from-to)	432-436
Number of pages	5
Journal	Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica
Volume	27
Issue number	2
DOIs	https://doi.org/10.3866/pku.whxb20110231
Publication status	Published - 2011
Externally published	Yes

Keywords

Annealing
Bi-layer tubular selenization facility
Saturated selenium vapor
Segregation
Selenization of stack element layer

Access to Document

10.3866/pku.whxb20110231

Cite this

@article{55cf8691b73f4daa81829a9ac331014a,

title = "Effect of Se vapor concentration on CIGS film preparation",

abstract = "We applied the {"}selenization of stack element layers{"} method to the preparation of Cuin1-xGaxSe2 (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W · m-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5\% was obtained.",

keywords = "Annealing, Bi-layer tubular selenization facility, Saturated selenium vapor, Segregation, Selenization of stack element layer",

author = "Cheng Liao and Han, \{Jun Feng\} and Tao Jiang and Xie, \{Hua Mu\} and Fei Jiao and Kui Zhao",

year = "2011",

doi = "10.3866/pku.whxb20110231",

language = "English",

volume = "27",

pages = "432--436",

journal = "Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica",

issn = "1000-6818",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Effect of Se vapor concentration on CIGS film preparation

AU - Liao, Cheng

AU - Han, Jun Feng

AU - Jiang, Tao

AU - Xie, Hua Mu

AU - Jiao, Fei

AU - Zhao, Kui

PY - 2011

Y1 - 2011

N2 - We applied the "selenization of stack element layers" method to the preparation of Cuin1-xGaxSe2 (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W · m-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5% was obtained.

AB - We applied the "selenization of stack element layers" method to the preparation of Cuin1-xGaxSe2 (CIGS) films. The selenium vapor concentration was precisely controlled to optimize the annealing process using a homemade bilayer tubular selenization facility, and its effect on the photoelectric characteristics of the films was studied. Auger electron spectroscopy (AES) and X-ray diffraction (XRD) were used to analyze the composition distribution in the cross-section and to obtain phase information, respectively. The output performance of the CIGS device was also measured under AM1.5 1000 W · m-2 illumination. The results indicated that the molybdenum back contact layer was seriously degraded by the saturated selenium vapor during annealing. Annealing with a low concentration of selenium vapor led to bad performance because of segregation and defects in the film. The CIGS film was homogeneous after annealing in a selenium-free inert atmosphere and a conversion efficiency of 8.5% was obtained.

KW - Annealing

KW - Bi-layer tubular selenization facility

KW - Saturated selenium vapor

KW - Segregation

KW - Selenization of stack element layer

UR - https://www.scopus.com/pages/publications/79951828025

U2 - 10.3866/pku.whxb20110231

DO - 10.3866/pku.whxb20110231

M3 - Article

AN - SCOPUS:79951828025

SN - 1000-6818

VL - 27

SP - 432

EP - 436

JO - Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica

JF - Wuli Huaxue Xuebao/ Acta Physico - Chimica Sinica

IS - 2

ER -

Effect of Se vapor concentration on CIGS film preparation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this