Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS                         2                          Field-Effect Transistors

Filippo Giubileo; Laura Iemmo; Maurizio Passacantando; Francesca Urban; Giuseppe Luongo; Linfeng Sun; Giampiero Amato; Emanuele Enrico; Antonio Di Bartolomeo

doi:10.1021/acs.jpcc.8b09089

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS ₂ Field-Effect Transistors

Filippo Giubileo^*
, Laura Iemmo
, Maurizio Passacantando
, Francesca Urban
, Giuseppe Luongo
, Linfeng Sun
, Giampiero Amato
, Emanuele Enrico
, Antonio Di Bartolomeo

^*Corresponding author for this work

National Research Council of Italy
University of Salerno
University of L'Aquila
Sungkyunkwan University
Istituto Nazionale di Ricerca Metrologica

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

Electrical characterization of few-layer MoS ₂ -based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO ₂ gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e ^- /nm ² . Finally, a complete field emission characterization of the MoS ₂ flake, achieving emission stability for several hours and a minimum turn-on field of â‰20 V/μm with a field enhancement factor of about 500 at an anode-cathode distance of â1.5 μm, demonstrates the suitability of few-layer MoS ₂ as a two-dimensional emitting surface for cold-cathode applications.

Original language	English
Pages (from-to)	1454-1461
Number of pages	8
Journal	Journal of Physical Chemistry C
Volume	123
Issue number	2
DOIs	https://doi.org/10.1021/acs.jpcc.8b09089
Publication status	Published - 17 Jan 2019
Externally published	Yes

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10.1021/acs.jpcc.8b09089

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Giubileo, F., Iemmo, L., Passacantando, M., Urban, F., Luongo, G., Sun, L., Amato, G., Enrico, E., & Di Bartolomeo, A. (2019). Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS ₂ Field-Effect Transistors Journal of Physical Chemistry C, 123(2), 1454-1461. https://doi.org/10.1021/acs.jpcc.8b09089

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title = " Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS 2 Field-Effect Transistors ",

abstract = " Electrical characterization of few-layer MoS 2 -based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO 2 gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e - /nm 2 . Finally, a complete field emission characterization of the MoS 2 flake, achieving emission stability for several hours and a minimum turn-on field of {\^a}‰20 V/μm with a field enhancement factor of about 500 at an anode-cathode distance of {\^a}1.5 μm, demonstrates the suitability of few-layer MoS 2 as a two-dimensional emitting surface for cold-cathode applications.",

author = "Filippo Giubileo and Laura Iemmo and Maurizio Passacantando and Francesca Urban and Giuseppe Luongo and Linfeng Sun and Giampiero Amato and Emanuele Enrico and \{Di Bartolomeo\}, Antonio",

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doi = "10.1021/acs.jpcc.8b09089",

language = "English",

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Giubileo, F, Iemmo, L, Passacantando, M, Urban, F, Luongo, G, Sun, L, Amato, G, Enrico, E & Di Bartolomeo, A 2019, ' Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS ₂ Field-Effect Transistors ', Journal of Physical Chemistry C, vol. 123, no. 2, pp. 1454-1461. https://doi.org/10.1021/acs.jpcc.8b09089

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS ₂ Field-Effect Transistors . / Giubileo, Filippo; Iemmo, Laura; Passacantando, Maurizio et al.
In: Journal of Physical Chemistry C, Vol. 123, No. 2, 17.01.2019, p. 1454-1461.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS 2 Field-Effect Transistors

AU - Giubileo, Filippo

AU - Iemmo, Laura

AU - Passacantando, Maurizio

AU - Urban, Francesca

AU - Luongo, Giuseppe

AU - Sun, Linfeng

AU - Amato, Giampiero

AU - Enrico, Emanuele

AU - Di Bartolomeo, Antonio

PY - 2019/1/17

Y1 - 2019/1/17

N2 - Electrical characterization of few-layer MoS 2 -based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO 2 gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e - /nm 2 . Finally, a complete field emission characterization of the MoS 2 flake, achieving emission stability for several hours and a minimum turn-on field of â‰20 V/μm with a field enhancement factor of about 500 at an anode-cathode distance of â1.5 μm, demonstrates the suitability of few-layer MoS 2 as a two-dimensional emitting surface for cold-cathode applications.

AB - Electrical characterization of few-layer MoS 2 -based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO 2 gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e - /nm 2 . Finally, a complete field emission characterization of the MoS 2 flake, achieving emission stability for several hours and a minimum turn-on field of â‰20 V/μm with a field enhancement factor of about 500 at an anode-cathode distance of â1.5 μm, demonstrates the suitability of few-layer MoS 2 as a two-dimensional emitting surface for cold-cathode applications.

UR - https://www.scopus.com/pages/publications/85059813590

U2 - 10.1021/acs.jpcc.8b09089

DO - 10.1021/acs.jpcc.8b09089

M3 - Article

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SN - 1932-7447

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EP - 1461

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 2

ER -

Giubileo F, Iemmo L, Passacantando M, Urban F, Luongo G, Sun L et al. Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS ₂ Field-Effect Transistors Journal of Physical Chemistry C. 2019 Jan 17;123(2):1454-1461. doi: 10.1021/acs.jpcc.8b09089

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS ₂ Field-Effect Transistors

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