TY - JOUR
T1 - Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS 2 Field-Effect Transistors
AU - Giubileo, Filippo
AU - Iemmo, Laura
AU - Passacantando, Maurizio
AU - Urban, Francesca
AU - Luongo, Giuseppe
AU - Sun, Linfeng
AU - Amato, Giampiero
AU - Enrico, Emanuele
AU - Di Bartolomeo, Antonio
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2019/1/17
Y1 - 2019/1/17
N2 - Electrical characterization of few-layer MoS 2 -based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO 2 gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e - /nm 2 . Finally, a complete field emission characterization of the MoS 2 flake, achieving emission stability for several hours and a minimum turn-on field of â‰20 V/μm with a field enhancement factor of about 500 at an anode-cathode distance of â1.5 μm, demonstrates the suitability of few-layer MoS 2 as a two-dimensional emitting surface for cold-cathode applications.
AB - Electrical characterization of few-layer MoS 2 -based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO 2 gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e - /nm 2 . Finally, a complete field emission characterization of the MoS 2 flake, achieving emission stability for several hours and a minimum turn-on field of â‰20 V/μm with a field enhancement factor of about 500 at an anode-cathode distance of â1.5 μm, demonstrates the suitability of few-layer MoS 2 as a two-dimensional emitting surface for cold-cathode applications.
UR - https://www.scopus.com/pages/publications/85059813590
U2 - 10.1021/acs.jpcc.8b09089
DO - 10.1021/acs.jpcc.8b09089
M3 - Article
AN - SCOPUS:85059813590
SN - 1932-7447
VL - 123
SP - 1454
EP - 1461
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 2
ER -