Effect of Cr3+-doping concentration on luminous intensity of Zn1.4Al1.2Ge0.4O4: xCr3+

Yunfeng Liu; Chao Peng; Mengya Wu; Yi Wang; Yi Shen; Fengfeng Li

doi:10.1007/s10854-021-05259-0

Effect of Cr³⁺-doping concentration on luminous intensity of Zn_1.4Al_1.2Ge_0.4O₄: xCr³⁺

Yunfeng Liu
, Chao Peng
, Mengya Wu
, Yi Wang
, Yi Shen^*
, Fengfeng Li^*

^*Corresponding author for this work

North China University of Science and Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Zn_1.4Al_1.2Ge_0.4O₄: xCr³⁺ (x = 0.1%, 0.25%, 0.5%, 1%, 2%) phosphors were prepared at 1400 °C by conventional solid-state reaction, and their phase compositions and luminescence properties were well characterized by means of XRD, photoluminescence spectra, decay curves and TL techniques. With Cr³⁺ doped Zn_1.4Al_1.2Ge_0.4O₄: xCr³⁺ phosphors exhibited near-infrared emission at 696 nm due to the ²E → ⁴A₂ transition of Cr³⁺ ions. The experimental results reveal that the Cr³⁺ doping concentration plays the crucial role in the luminescence performance of Zn_1.4Al_1.2Ge_0.4O₄: xCr³⁺ phosphors. When the Cr³⁺ concentration was determined to be 1%, Zn_1.4Al_1.2Ge_0.4O₄: Cr³⁺ phosphors obtained optimal the luminescence and afterglow performance. The mechanism of phosphor has been discussed. And the TL results revealed the depth and concentration of traps in the phosphor will be affected by the Cr³⁺ doping concentration.

Original language	English
Pages (from-to)	5286-5293
Number of pages	8
Journal	Journal of Materials Science: Materials in Electronics
Volume	32
Issue number	4
DOIs	https://doi.org/10.1007/s10854-021-05259-0
Publication status	Published - Feb 2021
Externally published	Yes

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@article{656418d24ca54df68e76d07853506355,

title = "Effect of Cr3+-doping concentration on luminous intensity of Zn1.4Al1.2Ge0.4O4: xCr3+",

abstract = "Zn1.4Al1.2Ge0.4O4: xCr3+ (x = 0.1\%, 0.25\%, 0.5\%, 1\%, 2\%) phosphors were prepared at 1400 °C by conventional solid-state reaction, and their phase compositions and luminescence properties were well characterized by means of XRD, photoluminescence spectra, decay curves and TL techniques. With Cr3+ doped Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors exhibited near-infrared emission at 696 nm due to the 2E → 4A2 transition of Cr3+ ions. The experimental results reveal that the Cr3+ doping concentration plays the crucial role in the luminescence performance of Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors. When the Cr3+ concentration was determined to be 1\%, Zn1.4Al1.2Ge0.4O4: Cr3+ phosphors obtained optimal the luminescence and afterglow performance. The mechanism of phosphor has been discussed. And the TL results revealed the depth and concentration of traps in the phosphor will be affected by the Cr3+ doping concentration.",

author = "Yunfeng Liu and Chao Peng and Mengya Wu and Yi Wang and Yi Shen and Fengfeng Li",

note = "Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature.",

year = "2021",

month = feb,

doi = "10.1007/s10854-021-05259-0",

language = "English",

volume = "32",

pages = "5286--5293",

journal = "Journal of Materials Science: Materials in Electronics",

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TY - JOUR

T1 - Effect of Cr3+-doping concentration on luminous intensity of Zn1.4Al1.2Ge0.4O4

T2 - xCr3+

AU - Liu, Yunfeng

AU - Peng, Chao

AU - Wu, Mengya

AU - Wang, Yi

AU - Shen, Yi

AU - Li, Fengfeng

PY - 2021/2

Y1 - 2021/2

N2 - Zn1.4Al1.2Ge0.4O4: xCr3+ (x = 0.1%, 0.25%, 0.5%, 1%, 2%) phosphors were prepared at 1400 °C by conventional solid-state reaction, and their phase compositions and luminescence properties were well characterized by means of XRD, photoluminescence spectra, decay curves and TL techniques. With Cr3+ doped Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors exhibited near-infrared emission at 696 nm due to the 2E → 4A2 transition of Cr3+ ions. The experimental results reveal that the Cr3+ doping concentration plays the crucial role in the luminescence performance of Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors. When the Cr3+ concentration was determined to be 1%, Zn1.4Al1.2Ge0.4O4: Cr3+ phosphors obtained optimal the luminescence and afterglow performance. The mechanism of phosphor has been discussed. And the TL results revealed the depth and concentration of traps in the phosphor will be affected by the Cr3+ doping concentration.

AB - Zn1.4Al1.2Ge0.4O4: xCr3+ (x = 0.1%, 0.25%, 0.5%, 1%, 2%) phosphors were prepared at 1400 °C by conventional solid-state reaction, and their phase compositions and luminescence properties were well characterized by means of XRD, photoluminescence spectra, decay curves and TL techniques. With Cr3+ doped Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors exhibited near-infrared emission at 696 nm due to the 2E → 4A2 transition of Cr3+ ions. The experimental results reveal that the Cr3+ doping concentration plays the crucial role in the luminescence performance of Zn1.4Al1.2Ge0.4O4: xCr3+ phosphors. When the Cr3+ concentration was determined to be 1%, Zn1.4Al1.2Ge0.4O4: Cr3+ phosphors obtained optimal the luminescence and afterglow performance. The mechanism of phosphor has been discussed. And the TL results revealed the depth and concentration of traps in the phosphor will be affected by the Cr3+ doping concentration.

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U2 - 10.1007/s10854-021-05259-0

DO - 10.1007/s10854-021-05259-0

M3 - Article

AN - SCOPUS:85099964428

SN - 0957-4522

VL - 32

SP - 5286

EP - 5293

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 4

ER -

Effect of Cr³⁺-doping concentration on luminous intensity of Zn_1.4Al_1.2Ge_0.4O₄: xCr³⁺

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