Abstract
The charge carriers conduction mechanism of single-layer device ITO/Alq3 (90 nm)/Al has been studied by impedance spectroscopy. According to the frequency-dependent response and its equivalent circuit model, the device can be interpreted in terms of the equivalent circuit model of a contact resistance RS in series with a parallel combination of a capacitance CP and a resistance RP, and the values of RP, CP and RS can be found from experimental data. Our experimental results confirmed that the charge carriers conduction mechanism of ITO/Alq3(90 nm)/Al is trap-charge limited current with exponential distribution, and the dielectric relaxation time of the material decreases dramatically with increasing applied bias voltages.
Original language | English |
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Pages (from-to) | 1632-1636 |
Number of pages | 5 |
Journal | Wuli Xuebao/Acta Physica Sinica |
Volume | 56 |
Issue number | 3 |
Publication status | Published - Mar 2007 |
Externally published | Yes |
Keywords
- Alq
- Impedance spectroscopy
- Organic light-emitting diodes (OLEDs)
- Trap-charge limited current