Double-side superconducting MgB2 films for microwave and electronic applications

Li Ping Chen; Li Li Ding; Qing Rong Feng; Guang Cheng Xiong; Yun Fei Wang; Sheng Luo; Xue Qiang Zhang; Yu Sheng He

doi:10.1063/1.2216900

Double-side superconducting MgB₂ films for microwave and electronic applications

Li Ping Chen^*, Li Li Ding, Qing Rong Feng, Guang Cheng Xiong, Yun Fei Wang, Sheng Luo, Xue Qiang Zhang, Yu Sheng He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Double-side superconducting MgB₂ films have been grown on double-side polished sapphire substrates by using hybrid physical-chemical vapor deposition method. The zero resistance temperatures T_C(0)>37 K and the critical current densities J_C(5 K,0 T)>3×10 ⁶ A/cm² have been achieved for both sides. In the first 8.73 G MgB₂ microstrip resonator fabricated by a double-side film, an unloaded Q value of 3400 at 11 K was obtained corresponding to surface resistance of 1.2 mΩ for the MgB₂/Al₂O₃ interface. By simply using a sapphire substrate with two polished holes, superconducting connection has been achieved for the double-side MgB₂ film. The results show potential applications for the superconducting MgB ₂ films in microwave and electronic devices.

Original language	English
Article number	262502
Journal	Applied Physics Letters
Volume	88
Issue number	26
DOIs	https://doi.org/10.1063/1.2216900
Publication status	Published - 2006
Externally published	Yes

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title = "Double-side superconducting MgB2 films for microwave and electronic applications",

abstract = "Double-side superconducting MgB2 films have been grown on double-side polished sapphire substrates by using hybrid physical-chemical vapor deposition method. The zero resistance temperatures TC(0)>37 K and the critical current densities JC(5 K,0 T)>3×10 6 A/cm2 have been achieved for both sides. In the first 8.73 G MgB2 microstrip resonator fabricated by a double-side film, an unloaded Q value of 3400 at 11 K was obtained corresponding to surface resistance of 1.2 mΩ for the MgB2/Al2O3 interface. By simply using a sapphire substrate with two polished holes, superconducting connection has been achieved for the double-side MgB2 film. The results show potential applications for the superconducting MgB 2 films in microwave and electronic devices.",

author = "Chen, \{Li Ping\} and Ding, \{Li Li\} and Feng, \{Qing Rong\} and Xiong, \{Guang Cheng\} and Wang, \{Yun Fei\} and Sheng Luo and Zhang, \{Xue Qiang\} and He, \{Yu Sheng\}",

year = "2006",

doi = "10.1063/1.2216900",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Double-side superconducting MgB2 films for microwave and electronic applications

AU - Chen, Li Ping

AU - Ding, Li Li

AU - Feng, Qing Rong

AU - Xiong, Guang Cheng

AU - Wang, Yun Fei

AU - Luo, Sheng

AU - Zhang, Xue Qiang

AU - He, Yu Sheng

PY - 2006

Y1 - 2006

N2 - Double-side superconducting MgB2 films have been grown on double-side polished sapphire substrates by using hybrid physical-chemical vapor deposition method. The zero resistance temperatures TC(0)>37 K and the critical current densities JC(5 K,0 T)>3×10 6 A/cm2 have been achieved for both sides. In the first 8.73 G MgB2 microstrip resonator fabricated by a double-side film, an unloaded Q value of 3400 at 11 K was obtained corresponding to surface resistance of 1.2 mΩ for the MgB2/Al2O3 interface. By simply using a sapphire substrate with two polished holes, superconducting connection has been achieved for the double-side MgB2 film. The results show potential applications for the superconducting MgB 2 films in microwave and electronic devices.

AB - Double-side superconducting MgB2 films have been grown on double-side polished sapphire substrates by using hybrid physical-chemical vapor deposition method. The zero resistance temperatures TC(0)>37 K and the critical current densities JC(5 K,0 T)>3×10 6 A/cm2 have been achieved for both sides. In the first 8.73 G MgB2 microstrip resonator fabricated by a double-side film, an unloaded Q value of 3400 at 11 K was obtained corresponding to surface resistance of 1.2 mΩ for the MgB2/Al2O3 interface. By simply using a sapphire substrate with two polished holes, superconducting connection has been achieved for the double-side MgB2 film. The results show potential applications for the superconducting MgB 2 films in microwave and electronic devices.

UR - https://www.scopus.com/pages/publications/33745627348

U2 - 10.1063/1.2216900

DO - 10.1063/1.2216900

M3 - Article

AN - SCOPUS:33745627348

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262502

ER -

Double-side superconducting MgB₂ films for microwave and electronic applications

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