Direct nanosecond laser welding of semiconductor materials

Pol Sopeña; Andong Wang; Alexandros Mouskeftaras; David Grojo

Direct nanosecond laser welding of semiconductor materials

Pol Sopeña^*
, Andong Wang
, Alexandros Mouskeftaras
, David Grojo

^*Corresponding author for this work

Aix-Marseille Université

Research output: Contribution to journal › Conference article › peer-review

Abstract

We provide a first solution to the challenging problem of direct laser micro-welding of semiconductors. Infrared nanosecond pulses applied on an optical contact between similar and dissimilar materials systematically create shear joining strengths >10 MPa.

Original language	English
Article number	JTh6A.4
Journal	Optics InfoBase Conference Papers
Publication status	Published - 2022
Externally published	Yes
Event	CLEO: Science and Innovations, S and I 2022 - San Jose, United States Duration: 15 May 2022 → 20 May 2022

Cite this

@article{2055e4f548eb48d7ae913f64d7914129,

title = "Direct nanosecond laser welding of semiconductor materials",

abstract = "We provide a first solution to the challenging problem of direct laser micro-welding of semiconductors. Infrared nanosecond pulses applied on an optical contact between similar and dissimilar materials systematically create shear joining strengths >10 MPa.",

author = "Pol Sope{\~n}a and Andong Wang and Alexandros Mouskeftaras and David Grojo",

note = "Publisher Copyright: {\textcopyright} Optica Publishing Group 2022, {\textcopyright} 2022 The Author(s); CLEO: Science and Innovations, S and I 2022 ; Conference date: 15-05-2022 Through 20-05-2022",

year = "2022",

language = "English",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

}

TY - JOUR

T1 - Direct nanosecond laser welding of semiconductor materials

AU - Sopeña, Pol

AU - Wang, Andong

AU - Mouskeftaras, Alexandros

AU - Grojo, David

PY - 2022

Y1 - 2022

N2 - We provide a first solution to the challenging problem of direct laser micro-welding of semiconductors. Infrared nanosecond pulses applied on an optical contact between similar and dissimilar materials systematically create shear joining strengths >10 MPa.

AB - We provide a first solution to the challenging problem of direct laser micro-welding of semiconductors. Infrared nanosecond pulses applied on an optical contact between similar and dissimilar materials systematically create shear joining strengths >10 MPa.

UR - https://www.scopus.com/pages/publications/85136777934

M3 - Conference article

AN - SCOPUS:85136777934

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - JTh6A.4

T2 - CLEO: Science and Innovations, S and I 2022

Y2 - 15 May 2022 through 20 May 2022

ER -

Direct nanosecond laser welding of semiconductor materials

Abstract

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