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Diode-pumped actively Q-switched Nd:GGG laser operating at 938 nm

  • X. Wang*
  • , H. J. Eichler
  • , Zhiguo Zhang
  • *Corresponding author for this work
  • Technical University of Berlin
  • CAS - Institute of Physics

Research output: Contribution to journalArticlepeer-review

Abstract

The stimulated emission cross-section of Nd:GGG crystal in 938 nm transition was measured by the amplifier approach. It is 2.3 × 10 -20 cm2. A quasi-continuous-wave diode pumped, actively Q-switched Nd:GGG laser operating at 938 nm was demonstrated. Pumped by laser diodes with 900 W peak power and 300 ms pulse duration, it generated 168 mJ energy in long pulse mode. The slope efficiency was 36%. Q-switched by a KD *P Pockels cell, 41 mJ output pulse energy was obtained. The pulse duration and peak power were 120 ns and 340 kW, respectively. The optical to optical efficiency was 7%.

Original languageEnglish
Pages (from-to)476-481
Number of pages6
JournalOptics and Laser Technology
Volume44
Issue number2
DOIs
Publication statusPublished - Mar 2012
Externally publishedYes

Keywords

  • Active Q-switch
  • Nd:GGG
  • Quasi-three-level

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