Abstract
The dielectric behavior of polymer-derived amorphous silicon carbonitride was investigated. The material exhibited an interfacial polarization. Although such a polarization exhibited a sharp decrease in the dielectric constant with frequency, the loss peak from this mechanism was not clearly observed because DC conduction dominated the dielectric loss. On the other hand, a sharp increase in the dielectric constant and loss peak were observed at 350 °C at 1 kHz, indicating that the interfacial polarization enhanced at elevated temperatures. This interfacial polarization can be attributed to the migration and accumulation of charge carriers at the interface of matrix and free-carbon phases.
| Original language | English |
|---|---|
| Pages (from-to) | 12209-12212 |
| Number of pages | 4 |
| Journal | Ceramics International |
| Volume | 43 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 15 Oct 2017 |
| Externally published | Yes |
Keywords
- Dielectric relaxation
- Impedance spectroscopy
- Silicon carbonitride
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